IXYS Integrated Circuits Division Distributor - PMIC - Gate Drivers - IXDI602SIATR IXDN602SIATR - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Driven Configuration	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IXDI602SIATR	IXYS Integrated Circuits Division	2A 8 SOIC DUAL INVERTING	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN602SIATR	IXYS Integrated Circuits Division	2A 8 LEAD SOIC DUAL NON INVERTIN	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN602D2TR	IXYS Integrated Circuits Division	IC GATE DVR 2A DUAL HS 8DFN	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN-EP (5x4)
IXDF602PI	IXYS Integrated Circuits Division	2A MOSFET 8 DIP DUAL INV/NON-INV	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDI602PI	IXYS Integrated Circuits Division	2A 8 DIP DUAL INVERTING	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IX4423NTR	IXYS Integrated Circuits Division	IC MOSFET DRIVER 3A SOIC	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	3A, 3A	Inverting	-	18ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4424NTR	IXYS Integrated Circuits Division	IC MOSFET DRIVER 3A SOIC	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	3A, 3A	Non-Inverting	-	18ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4425NTR	IXYS Integrated Circuits Division	IC MOSFET DRIVER 3A SOIC	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	3A, 3A	Inverting, Non-Inverting	-	18ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4423MTR	IXYS Integrated Circuits Division	3 AMP DUAL INVERTING LOW-SIDE	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IX4424MTR	IXYS Integrated Circuits Division	3 AMP DUAL NON-INVERTING LOW-S	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IX4425MTR	IXYS Integrated Circuits Division	3 AMP DUAL ONE INVERTING AND O	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IX4425N	IXYS Integrated Circuits Division	IC MOSFET DRIVER 3A SOIC	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	3A, 3A	Inverting, Non-Inverting	-	18ns, 18ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4424G	IXYS Integrated Circuits Division	3A DUAL NON-INVERTING LOW SIDE G	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXDD609SIATR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8-SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI609SIATR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN609SIATR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDD604D2TR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8DFN	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN-EP (5x4)
IXDD604SIATR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDF604SIATR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting, Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI604SIATR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN604SIATR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI609PI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8DIP	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDI609SIA	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN609PI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8DIP	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDN609SIA	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDF604PI	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8DIP	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting, Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDF602SITR	IXYS Integrated Circuits Division	2A 8SOIC EXP MTL DUAL IN/NON-INV	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI602SITR	IXYS Integrated Circuits Division	2A 8 SOIC EXP METAL DUAL INVERT	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN602SITR	IXYS Integrated Circuits Division	2A 8SOIC EXP MTL DUAL NON INVERT	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDF602SI	IXYS Integrated Circuits Division	2A 8SOIC EXP MTL DUAL IN/NON-INV	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI602SI	IXYS Integrated Circuits Division	2A 8 SOIC EXP METAL DUAL INVERT	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IX2127G	IXYS Integrated Circuits Division	IC HIGH SIDE DRIVER 8DIP	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	9 V ~ 12 V	0.8V, 3V	250mA, 500mA	Non-Inverting	600V	23ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IX2127N	IXYS Integrated Circuits Division	IC HIGH SIDE DRIVER 8SOIC	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	9 V ~ 12 V	0.8V, 3V	250mA, 500mA	Non-Inverting	600V	23ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX2127NTR	IXYS Integrated Circuits Division	IC MOSFET/IGBT DVR 600V 8-SOIC	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	9 V ~ 12 V	0.8V, 3V	250mA, 500mA	Non-Inverting	600V	23ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX21844NTR	IXYS Integrated Circuits Division	IC GATE DVR HALF 600V 14SOIC	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2V	1.4A, 1.8A	Non-Inverting	600V	23ns, 14ns	-40°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
IXDI614PI	IXYS Integrated Circuits Division	14A 8 PIN DIP INVERTING	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDN614PI	IXYS Integrated Circuits Division	14A 8 PIN DIP NON INVERTING	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IX2113BTR	IXYS Integrated Circuits Division	IC GATE DVR HIGH/LOW 600V 16SOIC	Active	Half-Bridge	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	9.4ns, 9.7ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IX21844G	IXYS Integrated Circuits Division	IC GATE DVR HALF 600V 14DIP	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2V	1.4A, 1.8A	Non-Inverting	600V	23ns, 14ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
IX2113G	IXYS Integrated Circuits Division	IC GATE DRVR 600V HI/LO 14DIP	Active	Half-Bridge	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	9.4ns, 9.7ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
IXDD609SITR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI609SITR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN609SITR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI609SI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD604SITR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDF604SITR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting, Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI604SITR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN604SITR	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL HS 8SOIC	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD609YI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV TO263-5	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263
IXDI609CI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV TO220-5	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5

Manufacturers for PMIC - Gate Drivers