品番 メーカー/ブランド 簡単な説明 部品ステータスタイプ要素の数出力タイプ電圧 - 電源、シングル/デュアル(±)電圧 - 入力オフセット(最大)電流 - 入力バイアス(最大)電流 - 出力(標準)電流 - 静止(最大)CMRR、PSRR(標準)伝搬遅延(最大)ヒステリシス動作温度パッケージ/ケース取付タイプサプライヤデバイスパッケージ
Toshiba Semiconductor and Storage IC COMP GP CMOS DUAL SM8 ActiveGeneral Purpose2Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA400µA
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140ns
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-40°C ~ 85°C8-TSSOP, 8-MSOP (0.110", 2.80mm Width)Surface MountSM8
Toshiba Semiconductor and Storage IC COMP SNGL GP PP CMOS US8 ActiveGeneral Purpose2Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA40µA
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680ns
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-40°C ~ 85°C8-VFSOP (0.091", 2.30mm Width)Surface MountUS8
Toshiba Semiconductor and Storage IC C0MP GP CMOS PUSH-PULL SMV ActiveGeneral Purpose1Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V1mV @ 5V1pA @ 5V25mA22µA
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680ns
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-40°C ~ 85°CSC-74A, SOT-753Surface MountSMV
Toshiba Semiconductor and Storage IC C0MP GP CMOS PUSH-PULL USV ActiveGeneral Purpose1Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA25mA220µA
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200ns
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-40°C ~ 85°C5-TSSOP, SC-70-5, SOT-353Surface MountUSV
Toshiba Semiconductor and Storage IC OPAMP CMOS COMPARATOR MP6C ActiveGeneral Purpose1Push-Pull1.3 V ~ 5.5 V6mV @ 3V1pA @ 3V18mA @ 3V35µA
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800ns
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-40°C ~ 85°C6-UFDFNSurface Mount6-MP6C (1.45x1.0)
Toshiba Semiconductor and Storage IC COMP GP CMOS DUAL US8 ActiveGeneral Purpose2Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V1mV @ 5V1pA @ 5V25mA220µA
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200ns
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-40°C ~ 85°C8-VFSOP (0.091", 2.30mm Width)Surface MountUS8
Toshiba Semiconductor and Storage IC COMP GP CMOS DUAL SM8 ActiveGeneral Purpose2Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA40µA
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680ns
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-40°C ~ 85°C8-TSSOP, 8-MSOP (0.110", 2.80mm Width)Surface MountSM8
Toshiba Semiconductor and Storage IC COMPARATOR SINGLE SSOP5 ActiveGeneral Purpose1CMOS, DTL, MOS, Open-Collector, TTL2 V ~ 36 V, ±1 V ~ 18 V5mV @ 5V0.05µA @ 5V16mA @ 5V800µA
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-40°C ~ 85°CSC-74A, SOT-753Surface MountSMV
Toshiba Semiconductor and Storage IC COMP SNGL GP OD CMOS SMV ActiveGeneral Purpose1Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA20µA
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800ns
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-40°C ~ 85°CSC-74A, SOT-753Surface MountSMV
Toshiba Semiconductor and Storage IC C0MP GP CMOS OPEN DRAIN SMV ActiveGeneral Purpose1Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA25mA220µA
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200ns
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-40°C ~ 85°CSC-74A, SOT-753Surface MountSMV
Toshiba Semiconductor and Storage IC COMP GP CMOS DUAL SM8 ActiveGeneral Purpose2Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V1mV @ 5V1pA @ 5V25mA220µA
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200ns
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-40°C ~ 85°C8-TSSOP, 8-MSOP (0.110", 2.80mm Width)Surface MountSM8
Toshiba Semiconductor and Storage IC COMP GP CMOS DUAL SM8 ActiveGeneral Purpose2Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA22µA
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800ns
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-40°C ~ 85°C8-TSSOP, 8-MSOP (0.110", 2.80mm Width)Surface MountSM8
Toshiba Semiconductor and Storage IC COMPARATOR DUAL SSOP8 ActiveGeneral Purpose2CMOS, DTL, MOS, Open-Collector, TTL2 V ~ 36 V, ±1 V ~ 18 V5mV @ 5V0.25µA @ 5V16nA @ 5V2mA
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-40°C ~ 85°C8-TSSOP, 8-MSOP (0.110", 2.80mm Width)Surface MountSM8
Toshiba Semiconductor and Storage IC C0MP GP CMOS PUSH-PULL SMV ActiveGeneral Purpose1Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA25mA220µA
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140ns
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-40°C ~ 85°CSC-74A, SOT-753Surface MountSMV
Toshiba Semiconductor and Storage IC COMP SNGL GP PP CMOS USV ActiveGeneral Purpose1Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA20µA
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800ns
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-40°C ~ 85°C5-TSSOP, SC-70-5, SOT-353Surface MountUSV
Toshiba Semiconductor and Storage IC COMP SNGL GP PP CMOS USV ActiveGeneral Purpose1Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA20µA
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680ns
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-40°C ~ 85°C5-TSSOP, SC-70-5, SOT-353Surface MountUSV
Toshiba Semiconductor and Storage IC COMP DUAL GP PP CMOS US8 Discontinued at -General Purpose2Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA400µA
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140ns
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-40°C ~ 85°C8-VFSOP (0.091", 2.30mm Width)Surface MountUS8
Toshiba Semiconductor and Storage IC COMP GP CMOS ESV ObsoleteGeneral Purpose1Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA18mA @ 5V22µA
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680ns
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-40°C ~ 85°CSOT-553Surface MountESV
Toshiba Semiconductor and Storage IC COMP GP CMOS DUAL US8 ObsoleteGeneral Purpose2Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA @ 5V25mA22µA
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800ns
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-40°C ~ 85°C8-VFSOP (0.091", 2.30mm Width)Surface MountUS8
Toshiba Semiconductor and Storage IC COMP GP CMOS ESV ObsoleteGeneral Purpose1Open Drain1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA25mA220µA
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200ns
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-40°C ~ 85°CSOT-553Surface MountESV
Toshiba Semiconductor and Storage IC C0MP GP CMOS PUSH-PULL USV ActiveGeneral Purpose1Push-Pull1.8 V ~ 7 V, ±0.9 V ~ 3.5 V7mV @ 5V1pA25mA220µA
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140ns
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-40°C ~ 85°C5-TSSOP, SC-70-5, SOT-353Surface MountUSV
Toshiba Semiconductor and Storage IC OPAMP CMOS COMPARATOR SOT-902 ObsoleteGeneral Purpose2Push-Pull1.3 V ~ 5.5 V6mV @ 3V1pA @ 3V18mA @ 3V47µA
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800ns
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-40°C ~ 85°C8-UFQFN Exposed PadSurface MountSOT-902