Maxim Integrated Distributor - Transistor - Bipolari (BJT) - RF - MAX2601ESA+ MAX2602ESA+

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequenza - Transizione	Figura del rumore (dB Typ @ f)	Guadagno	Potenza - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Corrente - Collector (Ic) (Max)	temperatura di esercizio	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore
MAX2601ESA+	Maxim Integrated	TRANSISTOR RF NPN 900MHZ 15V 8SOIC	Active	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
MAX2602ESA+	Maxim Integrated	TRANSISTOR RF NPN 900MHZ 15V 8SOIC	Active	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
MAX2601ESA+T	Maxim Integrated	TRANSISTOR RF NPN 900MHZ 15V 8SOIC	Active	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
MAX2602ESA+T	Maxim Integrated	TRANSISTOR RF NPN 900MHZ 15V 8SOIC	Active	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
MAX2601ESA	Maxim Integrated	IC TRANSISTOR 3.6V 1W RF POWER 8-SOIC	Discontinued at -	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
MAX2601ESA-T	Maxim Integrated	TRANSISTOR RF NPN 900MHZ 15V 8SOIC	Discontinued at -	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
MAX2602ESA	Maxim Integrated	TRANSISTOR RF NPN 900MHZ 15V 8SOIC	Discontinued at -	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
MAX2602ESA-T	Maxim Integrated	TRANSISTOR RF NPN 900MHZ 15V 8SOIC	Discontinued at -	NPN	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP

Produttori per Transistor - Bipolari (BJT) - RF