Manufacturer Part NumberIPD65R1K4CFDBTMA1
Manufacturer / BrandInfineon Technologies
Available Quantity56960 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 650V 2.8A TO-252
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPD65R1K4CFDBTMA1.pdf

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Part Number
IPD65R1K4CFDBTMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
262pF @ 100V
FET Feature
-
Power Dissipation (Max)
28.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Weight
Contact us
Application
Email for details
Replacement Part
IPD65R1K4CFDBTMA1

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