Manufacturer Part NumberIPB039N10N3GE8187ATMA1
Manufacturer / BrandInfineon Technologies
Available Quantity90540 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 100V 160A TO263-7
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPB039N10N3GE8187ATMA1.pdf

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Part Number
IPB039N10N3GE8187ATMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs
117nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8410pF @ 50V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7
Package / Case
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Weight
Contact us
Application
Email for details
Replacement Part
IPB039N10N3GE8187ATMA1

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IPB039N04LGATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3
IPB039N10N3GATMA1 Infineon Technologies MOSFET N-CH 100V 160A TO263-7
IPB039N10N3GE8187ATMA1 Infineon Technologies MOSFET N-CH 100V 160A TO263-7