Manufacturer Part NumberBSP300H6327XUSA1
Manufacturer / BrandInfineon Technologies
Available Quantity217630 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 800V 190MA SOT-223
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download BSP300H6327XUSA1.pdf

Please fill the below inquiry form, we will reply you the quotation for BSP300H6327XUSA1 within 24 hours.

Part Number
BSP300H6327XUSA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20 Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
230pF @ 25V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Weight
Contact us
Application
Email for details
Replacement Part
BSP300H6327XUSA1

Related Components made by Infineon Technologies

Related Keywords For "BSP30"

Part Number Manufacturer Description
BSP300 E6327 Infineon Technologies MOSFET N-CH 800V 190MA SOT-223
BSP300H6327XUSA1 Infineon Technologies MOSFET N-CH 800V 190MA SOT-223
BSP300L6327HUSA1 Infineon Technologies MOSFET N-CH 800V 190MA SOT-223