Taiwan Semiconductor Distributor - Diodes - Redresseurs - Simples - TSN520M60 S4G SK12H45 A0G - CHIPSIC

Numéro d'article	Fabricant / marque	Brève description	État de la pièce	Type de diode	Tension - DC Reverse (Vr) (Max)	Courant - Rectifié moyen (Io)	Tension - Avant (Vf) (Max) @ Si	La vitesse	Temps de récupération inverse (trr)	Courant - Fuite inverse @ Vr	Capacitance @ Vr, F	Type de montage	Paquet / cas	Package de périphérique fournisseur	Température de fonctionnement - Jonction
TSN520M60 S4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 60V 20A 8PDFN	Active	Standard	60V	20A	580mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	8-PowerTDFN	8-PDFN (5x6)	-55°C ~ 150°C
SK12H45 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 12A DO201AD	Active	Schottky	45V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 45V	-	Through Hole	DO-201AD, Axial	DO-201AD	200°C (Max)
SK12H60 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 12A DO201AD	Active	Schottky	60V	12A	700mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	200°C (Max)
MBRF7150HC0G	Taiwan Semiconductor Corporation	DIODE SCHTKY 150V 7.5A ITO220AC	Active	Schottky	150V	7.5A	1.02V @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SR1020HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 10A TO220AB	Active	Schottky	20V	10A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 125°C
SR1050HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 10A TO220AB	Active	Schottky	50V	10A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SK12H45 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 12A DO201AD	Active	Schottky	45V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 45V	-	Through Hole	DO-201AD, Axial	DO-201AD	200°C (Max)
SK12H60 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 12A DO201AD	Active	Schottky	60V	12A	700mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	200°C (Max)
SR815HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A DO201AD	Active	Schottky	150V	8A	1.02V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MBRS1635HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 16A TO263AB	Active	Schottky	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 35V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRS1645HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 16A TO263AB	Active	Schottky	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRS1650HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 16A TO263AB	Active	Schottky	50V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRS1660HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 16A TO263AB	Active	Schottky	60V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1001G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO263AB	Active	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 50V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1002G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO263AB	Active	Standard	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 100V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1003G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO263AB	Active	Standard	150V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 150V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1004G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO263AB	Active	Standard	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1005G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A TO263AB	Active	Standard	300V	10A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 300V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1006G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO263AB	Active	Standard	400V	10A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1007G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A TO263AB	Active	Standard	500V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 500V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1008G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO263AB	Active	Standard	600V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS820 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A TO263AB	Active	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS830 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A TO263AB	Active	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS840 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A TO263AB	Active	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS850 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A TO263AB	Active	Schottky	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS860 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A TO263AB	Active	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SR815HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A DO201AD	Active	Schottky	150V	8A	1.02V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HERAF1001G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A ITO220AC	Active	Standard	50V	10A	1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF1002G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A ITO220AC	Active	Standard	100V	10A	1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF1003G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A ITO220AC	Active	Standard	200V	10A	1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF1004G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A ITO220AC	Active	Standard	300V	10A	1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF1005G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A ITO220AC	Active	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF1006G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AC	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF1007G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 10A ITO220AC	Active	Standard	800V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF1008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 10A ITO220AC	Active	Standard	-	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MUR840HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AC	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF801GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AB	Active	Standard	50V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF802GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AB	Active	Standard	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF803GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 8A TO220AB	Active	Standard	150V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF804GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO220AB	Active	Standard	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF805GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A TO220AB	Active	Standard	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF806GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AB	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFA1004G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO220AC	Active	Standard	200V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1005G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A TO220AC	Active	Standard	300V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1006G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO220AC	Active	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA803GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 8A TO220AC	Active	Standard	150V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFF1001GAHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A ITO220AB	Active	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1001GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A ITO220AB	Active	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF507GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 5A ITO220AB	Active	Standard	500V	5A	1.7V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRA1050HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 10A TO220AC	Active	Schottky	50V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C

Fabricants pour Diodes - Redresseurs - Simples