Taiwan Semiconductor Distributor - Diodes - Redresseurs - Simples - HERA806G C0G HERA807G C0G - CHIPSIC

Numéro d'article	Fabricant / marque	Brève description	État de la pièce	Type de diode	Tension - DC Reverse (Vr) (Max)	Courant - Rectifié moyen (Io)	Tension - Avant (Vf) (Max) @ Si	La vitesse	Temps de récupération inverse (trr)	Courant - Fuite inverse @ Vr	Capacitance @ Vr, F	Type de montage	Paquet / cas	Package de périphérique fournisseur	Température de fonctionnement - Jonction
HERA806G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 600V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HERA807G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A TO220AC	Active	Standard	800V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 800V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HERAF801G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A ITO220AC	Active	Standard	50V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF802G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A ITO220AC	Active	Standard	100V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF803G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A ITO220AC	Active	Standard	200V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF804G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A ITO220AC	Active	Standard	300V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF805G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A ITO220AC	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF806G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC	Active	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF807G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A ITO220AC	Active	Standard	800V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MUR820HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO220AC	Active	Standard	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SFA1001G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO220AC	Active	Standard	50V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1002G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO220AC	Active	Standard	100V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1003G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO220AC	Active	Standard	150V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFAF801GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A ITO220AC	Active	Standard	50V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	90pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF802GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A ITO220AC	Active	Standard	100V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	90pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF803GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 8A ITO220AC	Active	Standard	150V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	90pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF804GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A ITO220AC	Active	Standard	200V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	90pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF503GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 5A ITO220AB	Active	Standard	150V	5A	980mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF504GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A ITO220AB	Active	Standard	200V	5A	980mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRA1050 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 10A TO220AC	Active	Schottky	50V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRAF550HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A ITO220AC	Active	Schottky	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF560HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A ITO220AC	Active	Schottky	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF1001G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A ITO220AB	Active	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
MBR7150 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 7.5A TO220AC	Active	Schottky	150V	7.5A	950mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBRF10100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A ITO220AC	Active	Schottky	100V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF7150 C0G	Taiwan Semiconductor Corporation	DIODE SCHTKY 150V 7.5A ITO220AC	Active	Schottky	150V	7.5A	1.02V @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF503G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 5A ITO220AC	Active	Standard	150V	5A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MUR840 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AC	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF807G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 8A TO220AB	Active	Standard	500V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF808G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AB	Active	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
MBR1635HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 16A TO220AC	Active	Schottky	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1645HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 16A TO220AC	Active	Schottky	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1650HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 16A TO220AC	Active	Schottky	50V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1660HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 16A TO220AC	Active	Schottky	60V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFF1002G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A ITO220AB	Active	Standard	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1002GA C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A ITO220AB	Active	Standard	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF507G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 5A ITO220AB	Active	Standard	500V	5A	1.7V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SR1202HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 12A DO201AD	Active	Schottky	20V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
SR1203HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 12A DO201AD	Active	Schottky	30V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
SR1204HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 12A DO201AD	Active	Schottky	40V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
SR1202HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 12A DO201AD	Active	Schottky	20V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
SR1203HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 12A DO201AD	Active	Schottky	30V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
SR1204HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 12A DO201AD	Active	Schottky	40V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
SFA801GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AC	Active	Standard	50V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA802GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AC	Active	Standard	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFAF501GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A ITO220AC	Active	Standard	50V	5A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF502GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A ITO220AC	Active	Standard	100V	5A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF505GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 5A ITO220AB	Active	Standard	300V	5A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF506GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A ITO220AB	Active	Standard	400V	5A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRA1020HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 10A TO220AC	Active	Schottky	20V	10A	550mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C

Fabricants pour Diodes - Redresseurs - Simples