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  2. Productos
  3. Productos semiconductores discretos
  4. Diodos - Rectificadores
- Simple
  5. Productos

Fabricantes de Diodos - Rectificadores
- Simple

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Número de pieza Fabricante / Marca Breve descripción Estado de la piezaTipo de diodoVoltaje - DC Reverse (Vr) (Max)Corriente - promedio rectificado (Io)Voltaje - Adelante (Vf) (Máx) @ SiVelocidadTiempo de recuperación inversa (trr)Current - Reverse Leakage @ VrCapacitancia @ Vr, FTipo de montajePaquete / cajaPaquete de dispositivo del proveedorTemperatura de funcionamiento - unión
JAN1N6620U
 Microsemi Corporation DIODE GEN PURP 200V 1.2A A-MELF ActiveStandard200V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 200V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTX1N6620U
 Microsemi Corporation DIODE GEN PURP 200V 1.2A A-MELF ActiveStandard200V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 200V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6620U
 Microsemi Corporation DIODE GEN PURP 200V 1.2A A-MELF ActiveStandard200V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 200V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6621U
 Microsemi Corporation DIODE GEN PURP 400V 1.2A A-MELF ActiveStandard400V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 400V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6621U
 Microsemi Corporation DIODE GEN PURP 400V 1.2A A-MELF ActiveStandard400V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 400V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6622U
 Microsemi Corporation DIODE GEN PURP 600V 1.2A A-MELF ActiveStandard600V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 600V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6622U
 Microsemi Corporation DIODE GEN PURP 600V 1.2A A-MELF ActiveStandard600V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 600V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6622US
 Microsemi Corporation DIODE GEN PURP 660V 2A D5A ActiveStandard660V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 660V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6623
 Microsemi Corporation DIODE GEN PURP 800V 1A AXIAL ActiveStandard800V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 800V
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Through HoleA, AxialA-PAK-65°C ~ 150°C
JAN1N6623U
 Microsemi Corporation DIODE GEN PURP 800V 1A A-MELF ActiveStandard800V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 800V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTX1N6623U
 Microsemi Corporation DIODE GEN PURP 800V 1A A-MELF ActiveStandard800V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 800V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6623U
 Microsemi Corporation DIODE GEN PURP 800V 1A A-MELF ActiveStandard800V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 800V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6624
 Microsemi Corporation DIODE GEN PURP 900V 1A AXIAL ActiveStandard900V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 900V
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Through HoleA, Axial
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-65°C ~ 150°C
JAN1N6624U
 Microsemi Corporation DIODE GEN PURP 900V 1A A-MELF ActiveStandard900V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 900V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTX1N6624U
 Microsemi Corporation DIODE GEN PURP 900V 1A A-MELF ActiveStandard900V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 900V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6624U
 Microsemi Corporation DIODE GEN PURP 900V 1A A-MELF ActiveStandard900V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 900V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6625
 Microsemi Corporation DIODE GEN PURP 1KV 1A AXIAL ActiveStandard1000V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 1000V
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Through HoleA, Axial
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-65°C ~ 150°C
JAN1N6625U
 Microsemi Corporation DIODE GEN PURP 1KV 1A A-MELF ActiveStandard1000V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 1000V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6625U
 Microsemi Corporation DIODE GEN PURP 1KV 1A A-MELF ActiveStandard1000V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns1µA @ 1000V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6626U
 Microsemi Corporation DIODE GEN PURP 200V 1.75A E-MELF ActiveStandard200V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 200V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTXV1N6626U
 Microsemi Corporation DIODE GEN PURP 200V 1.75A E-MELF ActiveStandard200V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 200V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6627U
 Microsemi Corporation DIODE GEN PURP 400V 1.75A E-MELF ActiveStandard400V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 400V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6628U
 Microsemi Corporation DIODE GEN PURP 600V 1.75A E-MELF ActiveStandard600V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 600V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTXV1N6628U
 Microsemi Corporation DIODE GEN PURP 600V 1.75A E-MELF ActiveStandard600V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 600V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6629U
 Microsemi Corporation DIODE GEN PURP 800V 1.4A E-MELF ActiveStandard800V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 800V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTX1N6629U
 Microsemi Corporation DIODE GEN PURP 800V 1.4A E-MELF Discontinued at -Standard800V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 800V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6630U
 Microsemi Corporation DIODE GEN PURP 900V 1.4A E-MELF ActiveStandard900V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 900V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTX1N6630U
 Microsemi Corporation DIODE GEN PURP 900V 1.4A E-MELF ActiveStandard900V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 900V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTX1N6630US
 Microsemi Corporation DIODE GEN PURP 900V 1.4A E-MELF Discontinued at -Standard900V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 900V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTXV1N6631
 Microsemi Corporation DIODE GEN PURP 1.1KV 1.4A D5B Discontinued at -Standard1100V1.4A1.6V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)60ns4µA @ 1100V40pF @ 10V, 1MHzThrough HoleE, AxialE-PAK-65°C ~ 150°C
JAN1N6631U
 Microsemi Corporation DIODE GEN PURP 1KV 1.4A E-MELF ActiveStandard1000V1.4A1.6V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)60ns4µA @ 1000V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6640US
 Microsemi Corporation DIODE GEN PURP 50V 300MA B-MELF Discontinued at -Standard50V300mA1V @ 300mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 50V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTX1N6642UB
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB Discontinued at -Standard75V300mA (DC)1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V
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Surface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JANTXV1N6642UB
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB Discontinued at -Standard75V300mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V
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Surface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JAN1N6642UBCA
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB Discontinued at -Standard75V300mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)5ns500nA @ 75V5pF @ 0V, 1MHzSurface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JANTX1N6642UBCA
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB Discontinued at -Standard75V300mA (DC)1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V
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Surface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JANTXV1N914
 Microsemi Corporation DIODE GEN PURP 75V 200MA DO35 Discontinued at -Standard75V200mA1.2V @ 50mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V2.8pF @ 1.5V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35 (DO-204AH)-65°C ~ 175°C
JANTXV1N914UR
 Microsemi Corporation DIODE GEN PURP 75V 200MA DO213AA Discontinued at -Standard75V200mA1.2V @ 50mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V2.8pF @ 1.5V, 1MHzSurface MountDO-213AADO-213AA-65°C ~ 175°C
UTR4340
 Microsemi Corporation DIODE GEN PURP 400V 4A AXIAL ActiveStandard400V4A1.1V @ 4AFast Recovery =< 500ns, > 200mA (Io)400ns5µA @ 400V
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Through HoleB, Axial
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-65°C ~ 175°C
APT30SCD65B
 Microsemi Corporation DIODE SIC 650V 46A TO247 ObsoleteSilicon Carbide Schottky650V46A1.8V @ 30ANo Recovery Time > 500mA (Io)0ns600µA @ 650V945pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-55°C ~ 150°C
1N6910UTK2AS
 Microsemi Corporation DIODE SCHOTTKY 15V 25A 2-THINKEY ActiveSilicon Carbide Schottky15V25A520mV @ 25ANo Recovery Time > 500mA (Io)0ns1.2mA @ 15V2000pF @ 5V, 1MHzSurface Mount
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2-ThinKey™-65°C ~ 150°C
MSASC25W100K
 Microsemi Corporation DIODE SCHOTTKY 100V 25A 2THINKEY ActiveSchottky100V25A910mV @ 25AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Surface Mount
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2-ThinKey™-65°C ~ 175°C
1N6657
 Microsemi Corporation RECTIFIER DIODE Active
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1N6657R
 Microsemi Corporation RECTIFIER DIODE Active
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1N6658
 Microsemi Corporation RECTIFIER DIODE Active
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1N6658R
 Microsemi Corporation RECTIFIER DIODE Active
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1N6659R
 Microsemi Corporation RECTIFIER DIODE Active
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JANTXV1N3673A
 Microsemi Corporation RECTIFIER Active
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R704
 Microsemi Corporation RECTIFIER Active
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R706
 Microsemi Corporation RECTIFIER Active
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