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  3. Productos semiconductores discretos
  4. Diodos - Rectificadores
- Simple
  5. Productos

Fabricantes de Diodos - Rectificadores
- Simple

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Número de pieza Fabricante / Marca Breve descripción Estado de la piezaTipo de diodoVoltaje - DC Reverse (Vr) (Max)Corriente - promedio rectificado (Io)Voltaje - Adelante (Vf) (Máx) @ SiVelocidadTiempo de recuperación inversa (trr)Current - Reverse Leakage @ VrCapacitancia @ Vr, FTipo de montajePaquete / cajaPaquete de dispositivo del proveedorTemperatura de funcionamiento - unión
HS18145
 Microsemi Corporation DIODE SCHOTTKY 45V 180A HALFPAK ObsoleteSchottky45V180A700mV @ 180AFast Recovery =< 500ns, > 200mA (Io)
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4mA @ 45V7500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS18135
 Microsemi Corporation DIODE SCHOTTKY 35V 180A HALFPAK ObsoleteSchottky35V180A700mV @ 180AFast Recovery =< 500ns, > 200mA (Io)
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4mA @ 35V7500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS183100
 Microsemi Corporation DIODE SCHOTTKY 100V 180A HALFPAK ObsoleteSchottky100V180A910mV @ 180AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 100V4800pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS183100R
 Microsemi Corporation DIODE SCHOTTKY 100V 180A HALFPAK ObsoleteSchottky, Reverse Polarity100V180A910mV @ 180AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 100V4800pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS247200R
 Microsemi Corporation DIODE SCHOTTKY 200V 240A HALFPAK ObsoleteSchottky, Reverse Polarity200V240A860mV @ 240AFast Recovery =< 500ns, > 200mA (Io)
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8mA @ 200V6000pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS12045R
 Microsemi Corporation DIODE SCHOTTKY 45V 120A HALFPAK ObsoleteSchottky, Reverse Polarity45V120A550mV @ 120AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 45V5500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS123100R
 Microsemi Corporation DIODE SCHOTTKY 100V 120A HALFPAK ObsoleteSchottky, Reverse Polarity100V120A910mV @ 120AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 100V3000pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS18135R
 Microsemi Corporation DIODE SCHOTTKY 35V 180A HALFPAK ObsoleteSchottky, Reverse Polarity35V180A700mV @ 180AFast Recovery =< 500ns, > 200mA (Io)
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4mA @ 35V7500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS18140R
 Microsemi Corporation DIODE SCHOTTKY 40V 180A HALFPAK ObsoleteSchottky, Reverse Polarity40V180A700mV @ 180AFast Recovery =< 500ns, > 200mA (Io)
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4mA @ 40V7500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS18145R
 Microsemi Corporation DIODE SCHOTTKY 45V 180A HALFPAK ObsoleteSchottky, Reverse Polarity45V180A700mV @ 180AFast Recovery =< 500ns, > 200mA (Io)
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4mA @ 45V7500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS18230R
 Microsemi Corporation DIODE SCHOTTKY 30V 180A HALFPAK ObsoleteSchottky, Reverse Polarity30V180A550mV @ 180AFast Recovery =< 500ns, > 200mA (Io)
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10mA @ 30V7000pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS24040R
 Microsemi Corporation DIODE SCHOTTKY 40V 240A HALFPAK ObsoleteSchottky, Reverse Polarity40V240A550mV @ 240AFast Recovery =< 500ns, > 200mA (Io)
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12mA @ 40V10500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS24045R
 Microsemi Corporation DIODE SCHOTTKY 45V 240A HALFPAK ObsoleteSchottky, Reverse Polarity45V240A550mV @ 240AFast Recovery =< 500ns, > 200mA (Io)
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12mA @ 45V10500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS24230R
 Microsemi Corporation DIODE SCHOTTKY 30V 240A HALFPAK ObsoleteSchottky, Reverse Polarity30V240A550mV @ 240AFast Recovery =< 500ns, > 200mA (Io)
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12mA @ 30V10500pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS246150R
 Microsemi Corporation DIODE SCHOTTKY 150V 240A HALFPAK ObsoleteSchottky, Reverse Polarity150V240A860mV @ 240AFast Recovery =< 500ns, > 200mA (Io)
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8mA @ 150V6000pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HS247180R
 Microsemi Corporation DIODE SCHOTTKY 180V 240A HALFPAK ObsoleteSchottky, Reverse Polarity180V240A860mV @ 240AFast Recovery =< 500ns, > 200mA (Io)
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8mA @ 180V6000pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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HU10260R
 Microsemi Corporation DIODE GEN PURP 600V 100A HALFPAK ObsoleteStandard, Reverse Polarity600V100A1.35V @ 100AFast Recovery =< 500ns, > 200mA (Io)90ns50µA @ 600V275pF @ 10V, 1MhzChassis MountHALF-PAKHALF-PAK
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HU20260R
 Microsemi Corporation DIODE GEN PURP 600V 200A HALFPAK ObsoleteStandard, Reverse Polarity600V200A1.35V @ 200AFast Recovery =< 500ns, > 200mA (Io)130ns50µA @ 600V
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Chassis MountHALF-PAKHALF-PAK
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SDM30004R
 Microsemi Corporation DIODE GEN PURP 400V 300A DIE ObsoleteStandard, Reverse Polarity400V300A1.1V @ 300AStandard Recovery >500ns, > 200mA (Io)
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75µA @ 400V
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Chassis MountDieDie
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HS243100R
 Microsemi Corporation DIODE SCHOTTKY 100V 240A HALFPAK ObsoleteSchottky, Reverse Polarity100V240A860mV @ 240AFast Recovery =< 500ns, > 200mA (Io)
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8mA @ 100V6400pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
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JANTX1N3890R
 Microsemi Corporation DIODE GEN PURP 100V 12A DO203AA ActiveStandard100V12A1.5V @ 20AFast Recovery =< 500ns, > 200mA (Io)200ns10µA @ 100V115pF @ 10V, 1MHzStud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
JAN1N5618US
 Microsemi Corporation DIODE GEN PURP 600V 1A D5A Discontinued at -Standard600V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 600V
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Surface MountSQ-MELF, AD-5A-65°C ~ 200°C
JAN1N5621US
 Microsemi Corporation DIODE GEN PURP 800V 1A D5A Discontinued at -Standard800V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns500nA @ 800V
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Surface MountSQ-MELF, AD-5A-65°C ~ 175°C
JAN1N5804US
 Microsemi Corporation DIODE GEN PURP 100V 2.5A D5A Discontinued at -Standard100V2.5A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 100V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
JAN1N5807
 Microsemi Corporation DIODE GEN PURP 50V 6A AXIAL Discontinued at -Standard50V6A875mV @ 4AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 50V60pF @ 10V, 1MHzThrough HoleB, Axial
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-65°C ~ 175°C
JAN1N6620
 Microsemi Corporation DIODE GEN PURP 220V 2A AXIAL ActiveStandard220V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 220V10pF @ 10V, 1MHzThrough HoleA, Axial
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-65°C ~ 150°C
JAN1N6620US
 Microsemi Corporation DIODE GEN PURP 220V 2A D5A ActiveStandard220V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 220V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6621
 Microsemi Corporation DIODE GEN PURP 440V 2A AXIAL ActiveStandard440V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 440V10pF @ 10V, 1MHzThrough HoleA, Axial
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-65°C ~ 150°C
JAN1N6622
 Microsemi Corporation DIODE GEN PURP 660V 2A AXIAL Discontinued at -Standard660V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 660V10pF @ 10V, 1MHzThrough HoleA, Axial
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-65°C ~ 150°C
JAN1N6626
 Microsemi Corporation DIODE GEN PURP 220V 1.75A AXIAL ActiveStandard220V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 220V40pF @ 10V, 1MHzThrough HoleE, Axial
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-65°C ~ 150°C
JAN1N6626US
 Microsemi Corporation DIODE GEN PURP 220V 1.75A D5B ActiveStandard220V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 220V40pF @ 10V, 1MHzSurface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6627
 Microsemi Corporation DIODE GEN PURP 440V 1.75A AXIAL ActiveStandard440V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 440V40pF @ 10V, 1MHzThrough HoleE, Axial
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-65°C ~ 150°C
JAN1N6627US
 Microsemi Corporation DIODE GEN PURP 440V 1.75A D5B Discontinued at -Standard440V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 440V40pF @ 10V, 1MHzSurface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6628
 Microsemi Corporation DIODE GEN PURP 660V 1.75A AXIAL ActiveStandard660V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 600V
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Through HoleE, Axial
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-65°C ~ 175°C
JAN1N6629
 Microsemi Corporation DIODE GEN PURP 880V 1.4A AXIAL ActiveStandard880V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 800V
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Through HoleE, Axial
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-65°C ~ 175°C
JAN1N6631
 Microsemi Corporation DIODE GEN PURP 1.1KV 1.4A AXIAL ActiveStandard1100V1.4A1.6V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns2µA @ 1000V
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Through HoleE, Axial
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-65°C ~ 175°C
JANTX1N5419US
 Microsemi Corporation DIODE GEN PURP 500V 3A D5B Discontinued at -Standard500V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)250ns1µA @ 500V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTX1N6624US
 Microsemi Corporation DIODE GEN PURP 990V 1A D5A Discontinued at -Standard990V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 990V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N4248
 Microsemi Corporation DIODE GEN PURP 800V 1A AXIAL Discontinued at -Standard800V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)5µs1µA @ 800V
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Through HoleA, Axial
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-65°C ~ 175°C
JANTXV1N5415US
 Microsemi Corporation DIODE GEN PURP 50V 3A D5B Discontinued at -Standard50V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 50V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTXV1N5416
 Microsemi Corporation DIODE GEN PURP 100V 3A AXIAL Discontinued at -Standard100V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 100V
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Through HoleB, Axial
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-65°C ~ 175°C
JANTXV1N5419
 Microsemi Corporation DIODE GEN PURP 500V 3A AXIAL Discontinued at -Standard500V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 500V
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Through HoleB, Axial
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-65°C ~ 175°C
JANTXV1N5616US
 Microsemi Corporation DIODE GEN PURP 400V 1A D5A Discontinued at -Standard400V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 400V
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Surface MountSQ-MELF, AD-5A-65°C ~ 200°C
JANTXV1N5621US
 Microsemi Corporation DIODE GEN PURP 800V 1A D5A Discontinued at -Standard800V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns500nA @ 800V20pF @ 12V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
JANTXV1N5802
 Microsemi Corporation DIODE GEN PURP 50V 1A AXIAL Discontinued at -Standard50V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 50V25pF @ 10V, 1MHzThrough HoleA, Axial
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-65°C ~ 175°C
JANTXV1N5802US
 Microsemi Corporation DIODE GEN PURP 50V 1A D5A Discontinued at -Standard50V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 50V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
JANTXV1N5804US
 Microsemi Corporation DIODE GEN PURP 100V 1A D5A Discontinued at -Standard100V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 100V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
JANTXV1N5807US
 Microsemi Corporation DIODE GEN PURP 50V 3A D5B Discontinued at -Standard50V3A875mV @ 4AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 50V60pF @ 10V, 1MHzSurface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTXV1N6622US
 Microsemi Corporation DIODE GEN PURP 660V 1.2A D5A Discontinued at -Standard660V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 660V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6625
 Microsemi Corporation DIODE GEN PURP 1.1KV 1A D5A Discontinued at -Standard1100V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns1µA @ 1100V
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Through HoleA, AxialA-PAK-65°C ~ 150°C
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