Part Number

SI2304DDS-T1-GE3

Production Status (Lifecycle)

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Manufacturer Lead time

6-8 weeks

Condition

New & Unused, Original Sealed

Shipping way

DHL / FEDEX / UPS / TNT / EMS / Normal Post

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta), 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

60 mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

235pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta), 1.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Weight

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Application

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Replacement Part

SI2304DDS-T1-GE3