Manufacturer Part NumberRN1911FETE85LF
Manufacturer / BrandToshiba Semiconductor and Storage
Available Quantity18550 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR 2NPN PREBIAS 0.1W ES6
Product CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download RN1911FETE85LF.pdf

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Part Number
RN1911FETE85LF
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Weight
Contact us
Application
Email for details
Replacement Part
RN1911FETE85LF

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