Manufacturer Part NumberTSM60N1R4CH C5G
Manufacturer / BrandTaiwan Semiconductor Corporation
Available Quantity159030 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 600V 3.3A TO251
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download TSM60N1R4CH C5G.pdf

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Part Number
TSM60N1R4CH C5G
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 100V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Weight
Contact us
Application
Email for details
Replacement Part
TSM60N1R4CH C5G

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