8M of SAMSUNG Components,K4E640812E,K4E640812E-JC/L,K4M51163LE,K4M51163LE-F,K4M51163LE-L

8M SAMSUNG Components

Resistors	Sensors, Transducers	Integrated Circuits (ICs)	Passive Components
Through Hole Resistors	Temperature Sensors - Thermocouple, Temperature Probes Proximity Sensors	Embedded - Microprocessors Memory - Configuration Proms for FPGAs Embedded - DSP (Digital Signal Processors) Memory	SAMSUNG Components

Part Number	Manufacturer / Brand	Brife Description
K4E640812E	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4E640812E-JC/L	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4M51163LE	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE-F	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE-L	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE-YC	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE-YF1L	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE-YL	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE-YPF1H	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE-YPF1L	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE-YPL	SAMSUNG	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511632D	SAMSUNG	DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S511632D-KC	SAMSUNG	DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S511632D-KC/L1H	SAMSUNG	DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S511632D-KC/L1L	SAMSUNG	DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S511632D-KC/L75	SAMSUNG	DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S511632D-KC/L7C	SAMSUNG	DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
K9S6408V0A-SSB0	SAMSUNG	8M x 8 Bit SmartMediaTM Card
KM29U64000IT	SAMSUNG	8M x 8 Bit NAND Flash Memory
KM29U64000T	SAMSUNG	8M x 8 Bit NAND Flash Memory
KM48C8004B	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out
KM48C8104B	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out
KM48V8004B	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out
KM48V8004C	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out
KM48V8104B	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out
KM48V8104C	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out
KMM372C803CK	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 5V
KMM372C803CS	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 5V
KMM372C804BS	SAMSUNG	8M x 72 DRAM DIMM with ECC using 4M16 4K Refresh 5V
KMM372C883CK	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 5V
KMM372C883CS	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 5V
KMM372F803BK	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 3.3V
KMM372F803BS	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 3.3V
KMM372F804BS	SAMSUNG	8M x 72 DRAM DIMM with ECC using 4Mx16 4Mx4 4K Refresh 3.3V
KMM372F883BK	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 3.3V
KMM372F883BS	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 3.3V
KMM372V803BK	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 3.3V
KMM372V803BS	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 3.3V
KMM372V883BK	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 3.3V
KMM372V883BS	SAMSUNG	8M x 72 DRAM DIMM with ECC using 8Mx8 4K 8K Refresh 3.3V
KMM5328000CK	SAMSUNG	8M x 32 DRAM SIMM using 4Mx4 4K/2K Refresh 5V
KMM5328000CKG	SAMSUNG	8M x 32 DRAM SIMM using 4Mx4 4K/2K Refresh 5V
KMM5328004BSW	SAMSUNG	8M x 32 DRAM SIMM Using 4Mx16 4K Refresh 5V
KMM5328004BSWG	SAMSUNG	8M x 32 DRAM SIMM Using 4Mx16 4K Refresh 5V
KMM5328004CSW	SAMSUNG	8M x 32 DRAM SIMM Using 4Mx16 4K Refresh 5V
KMM5328004CSWG	SAMSUNG	8M x 32 DRAM SIMM Using 4Mx16 4K Refresh 5V
KMM5328100CK	SAMSUNG	8M x 32 DRAM SIMM using 4Mx4 4K/2K Refresh 5V
KMM5328100CKG	SAMSUNG	8M x 32 DRAM SIMM using 4Mx4 4K/2K Refresh 5V
KMM5368003BSW	SAMSUNG	8M x 36 DRAM SIMM Using 4Mx16 Quad CAS 4Mx4 4K Refresh 5V
KMM5368003BSWG	SAMSUNG	8M x 36 DRAM SIMM Using 4Mx16 Quad CAS 4Mx4 4K Refresh 5V