|
3M |
TOUCH SCREEN 41.57 |
|
3M |
TOUCH SCREEN 47.64 |
|
3M |
TOUCH SCREEN 32.98 |
|
3M |
TOUCH SCREEN 43.23 |
|
3M |
TOUCH SCREEN 46.16 |
|
3M |
TOUCH SCREEN 40 |
|
3M |
TOUCH SCREEN 42.05 |
|
3M |
TOUCH SCREEN 47.1 |
|
Sensata-BEI Sensors |
ROTARY ENCODR INCREMENT 1024PPR |
|
Sensata-BEI Sensors |
ROTARY ENCODR INCREMENT 2048PPR |
|
Sensata-BEI Sensors |
ROTARY ENCODR INCREMENT 1024PPR |
|
Sensata-BEI Sensors |
ROTARY ENCODR INCREMENT 2048PPR |
|
Sensata-BEI Sensors |
ROTARY ENCODR INCREMENT 1024PPR |
|
Sensata-BEI Sensors |
ROTARY ENCODR INCREMENT 2048PPR |
|
MAXIM |
DSUB 25pol.Buchse 90 MAXIM IC Original |
|
Texas Instruments |
IC DRIVR/RCVR EIA/TIA-232 20SOIC |
|
Texas Instruments |
IC DRIVR/RCVR EIA/TIA-232 20SOIC |
|
MAXIM |
DSX84-GA DALLAS MAXIM IC SOP |
|
MAXIM |
DSY MAXIM IC SOP8 |
|
MAXIM |
DSYCHAIN MAXIM IC QFN10 |
|
Texas Instruments (TI) |
DSYGPH181030MW TI BGA IC |
|
MAXIM |
dsz1t07e DALLAS MAXIM IC SOP-8 |
|
SAMSUNG |
1Mx16 bit Uni-Transistor Random Access Memory |
|
SAMSUNG |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|
SAMSUNG |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
|
SAMSUNG |
1M x 16 SDRAM |
|
SAMSUNG |
1M x 16 SDRAM |
|
SAMSUNG |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
SAMSUNG |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
SAMSUNG |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
SAMSUNG |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
SAMSUNG |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
SAMSUNG |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
SAMSUNG |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
SAMSUNG |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
|
SAMSUNG |
CMOS SRAM |
|
SAMSUNG |
64Kx36 64Kx32-Bit Synchronous Pipelined Burst SRAM |
|
SAMSUNG |
256Kx36 512Kx18 Synchronous SRAM |
|
SAMSUNG |
256Kx36 512Kx18-Bit Synchronous Burst SRAM |
|
SAMSUNG |
1Mx36 2Mx18 Flow-Through NtRAM |
|
SAMSUNG |
256Kx36 512Kx18-Bit Flow Through NtRAM |
|
SAMSUNG |
512Kx36 1Mx18 Pipelined NtRAM |
|
SAMSUNG |
1Mx36 2Mx18-Bit Pipelined NtRAM |
|
SAMSUNG |
256Kx36 512Kx18-Bit Pipelined NtRAM |
|
SAMSUNG |
256Kx36 512Kx18-Bit Pipelined NtRAMTM |
|
SAMSUNG |
1Mx36 2Mx18 4Mx9 QDRTM II b2 SRAM |
|
SAMSUNG |
64M x 8 Bit NAND Flash Memory |
|
SAMSUNG |
64M x 8 Bit NAND Flash Memory |
|
SAMSUNG |
PC133/PC100 Unbuffered DIMM |
|
SAMSUNG |
256MB DDR SDRAM MODULE |