номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
Infineon Technologies MOSFET P-CH 30V 50A TO-252 ObsoleteP-ChannelMOSFET (Metal Oxide)30V50A (Tc)4.5V, 10V7 mOhm @ 50A, 10V2V @ 250µA126nC @ 10V±20V6880pF @ 25V
-
150W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO252-5TO-252-5, DPak (4 Leads + Tab), TO-252AD
Infineon Technologies MOSFET N-CH 100V 100A TO262-3 ObsoleteN-ChannelMOSFET (Metal Oxide)100V137A (Tc)6V, 10V4.5 mOhm @ 100A, 10V3.5V @ 150µA117nC @ 10V±20V8410pF @ 50V
-
214W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 75V 120A TO220 ObsoleteN-ChannelMOSFET (Metal Oxide)75V120A (Tc)10V2.3 mOhm @ 100A, 10V3.8V @ 273µA206nC @ 10V±20V14400pF @ 37.5V
-
300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 800V 4A TO-220AB ObsoleteN-ChannelMOSFET (Metal Oxide)800V4A (Tc)10V1.3 Ohm @ 2.5A, 10V3.9V @ 240µA31nC @ 10V±20V570pF @ 100V
-
63W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 800V 6A TO-220AB ObsoleteN-ChannelMOSFET (Metal Oxide)800V6A (Tc)10V900 mOhm @ 3.8A, 10V3.9V @ 250µA41nC @ 10V±20V785pF @ 100V
-
83W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 800V 8A TO-220AB ObsoleteN-ChannelMOSFET (Metal Oxide)800V8A (Tc)10V650 mOhm @ 5.1A, 10V3.9V @ 470µA60nC @ 10V±20V1100pF @ 100V
-
104W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 55V 80A TO-220 ObsoleteN-ChannelMOSFET (Metal Oxide)55V80A (Tc)10V8 mOhm @ 80A, 10V4V @ 240µA187nC @ 10V±20V3660pF @ 25V
-
300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 650V TO-247-3 ObsoleteN-ChannelMOSFET (Metal Oxide)650V46A (Tc)10V45 mOhm @ 24.9A, 10V4V @ 1.25mA93nC @ 10V±20V4.34nF @ 400V
-
227W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247TO-247-3
Nexperia USA Inc. MOSFET P-CH 20V SOT23 ObsoleteP-ChannelMOSFET (Metal Oxide)20V3.5A (Ta)2.5V, 4.5V55 mOhm @ 2.4A, 4.5V1.25V @ 250µA11nC @ 4.5V±12V1nF @ 10V
-
510mW (Ta), 4.15W (Tc)150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
Nexperia USA Inc. MOSFET P-CH 20V SOT23 ObsoleteP-ChannelMOSFET (Metal Oxide)20V2.8A (Ta)1.8V, 4.5V74 mOhm @ 2.8A, 4.5V900mV @ 250µA7.7nC @ 4.5V±12V744pF @ 20V
-
480mW (Ta), 4.17W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
Renesas Electronics America MOSFET N-CH ObsoleteN-ChannelMOSFET (Metal Oxide)30V35A (Ta)4.5V, 10V5.2 mOhm @ 17.5A, 10V2.5V @ 1mA14nC @ 10V±20V2180pF @ 10V
-
40W (Ta)150°CSurface MountWPAK(3F) (5x6)8-PowerVDFN
ON Semiconductor PMOS SSOT6 20V 65 MOHM ActiveP-ChannelMOSFET (Metal Oxide)20V4A (Ta)2.5V, 4.5V65 mOhm @ 4A, 4.5V1.5V @ 250µA9nC @ 4.5V±8V630pF @ 10V
-
1.2W (Ta)-55°C ~ 150°C (TJ)Surface MountTSOT-23-6SOT-23-6 Thin, TSOT-23-6
ON Semiconductor PMOS DPAK 40V 44 MOHM ActiveP-ChannelMOSFET (Metal Oxide)40V14A (Tc)4.5V, 10V44 mOhm @ 6.7A, 10V3V @ 250µA29nC @ 10V±20V1550pF @ 20V
-
50W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
ON Semiconductor NMOS DPAK 40V 8.7 MOHM ActiveN-ChannelMOSFET (Metal Oxide)40V50A (Ta)10V8.7 mOhm @ 50A, 10V4V @ 250µA59nC @ 10V±20V4050pF @ 25V
-
79W (Ta)-55°C ~ 175°C (TJ)Surface MountTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
ON Semiconductor NMOS SO8 40V 29 MOHM ActiveN-ChannelMOSFET (Metal Oxide)40V7.6A (Ta)4.5V, 10V29 mOhm @ 7.6A, 10V3V @ 250µA11nC @ 5V±20V760pF @ 20V
-
5W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
ON Semiconductor PMOS D2PAK 100V 60 MOHM ActiveP-ChannelMOSFET (Metal Oxide)100V33.5A (Tc)10V60 mOhm @ 16.75A, 10V4V @ 250µA110nC @ 10V±25V2910pF @ 25V
-
3.75W (Ta), 155W (Tc)-55°C ~ 175°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Microsemi Corporation P CHANNEL MOSFET TO-257 Obsolete
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Microsemi Corporation N CHANNEL MOSFET LCC-18 ObsoleteN-ChannelMOSFET (Metal Oxide)100V8A (Tc)12V185 mOhm @ 8A, 12V4V @ 1mA50nC @ 12V±20V
-
-
25W (Tc)-55°C ~ 150°CSurface Mount18-ULCC (9.14x7.49)18-CLCC
Microsemi Corporation N CHANNEL MOSFET LCC-18 ObsoleteN-ChannelMOSFET (Metal Oxide)200V5.5A (Tc)12V364 mOhm @ 5.5A, 12V4V @ 1mA50nC @ 12V±20V
-
-
25W (Tc)-55°C ~ 150°CSurface Mount18-ULCC (9.14x7.49)18-CLCC
Microsemi Corporation N CHANNEL MOSFET SMD-1 ObsoleteN-ChannelMOSFET (Metal Oxide)100V34A (Tc)12V70 mOhm @ 34A, 12V4V @ 1mA160nC @ 12V±20V
-
-
150W (Tc)-55°C ~ 150°CSurface MountU1 (SMD-1)3-SMD, No Lead
Microsemi Corporation N CHANNEL MOSFET TO-254 ObsoleteN-ChannelMOSFET (Metal Oxide)200V26A (Tc)12V110 mOhm @ 26A, 12V4V @ 1mA170nC @ 12V±20V
-
-
150W (Tc)-55°C ~ 150°CThrough HoleTO-254AATO-254-3, TO-254AA (Straight Leads)
Microsemi Corporation N CHANNEL MOSFET SMD-1 ObsoleteN-ChannelMOSFET (Metal Oxide)200V26A (Tc)12V110 mOhm @ 26A, 12V4V @ 1mA170nC @ 12V±20V
-
-
150W (Tc)-55°C ~ 150°CSurface MountU1 (SMD-1)3-SMD, No Lead
Microsemi Corporation N CHANNEL MOSFET TO-257 RAD ObsoleteN-ChannelMOSFET (Metal Oxide)100V14.4A (Tc)12V200 mOhm @ 14.4A, 12V4V @ 1mA40nC @ 12V±20V
-
-
2W (Ta), 75W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-257TO-257-3
Microsemi Corporation N CHANNEL MOSFET TO-257 RAD ObsoleteN-ChannelMOSFET (Metal Oxide)200V9.4A (Tc)12V490 mOhm @ 9.4A, 12V4V @ 1mA50nC @ 12V±20V
-
-
2W (Ta), 75W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-257TO-257-3
Microsemi Corporation P CHANNEL MOSFET TO-39 ObsoleteP-ChannelMOSFET (Metal Oxide)100V6.5A (Tc)12V350 mOhm @ 6.5A, 12V4V @ 1mA45nC @ 12V±20V
-
-
25W (Tc)-55°C ~ 150°CThrough HoleTO-205AF (TO-39)TO-205AF Metal Can
Microsemi Corporation P CHANNEL MOSFET LCC-18 ObsoleteP-ChannelMOSFET (Metal Oxide)100V6.5A (Tc)12V350 mOhm @ 6.5A, 12V4V @ 1mA45nC @ 12V±20V
-
-
25W (Tc)-55°C ~ 150°CSurface Mount18-ULCC (9.14x7.49)18-CLCC
Diodes Incorporated MOSFET P-CH 20V TSOT26 Preliminary
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated MOSFET P-CH 20V TSOT26 Preliminary
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated MOSFET P-CH 20V TSOT26 Preliminary
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated MOSFET P-CH 20V SOT23-3 PreliminaryP-ChannelMOSFET (Metal Oxide)20V3.5A (Ta)2.5V, 4.5V80 mOhm @ 2.8A, 4.5V1V @ 250µA6nC @ 4.5V±10V443pF @ 10V
-
800mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
Diodes Incorporated MOSFET P-CH 25V 9UWLB PreliminaryP-ChannelMOSFET (Metal Oxide)25V3.9A (Ta)1.8V, 4.5V40 mOhm @ 2A, 4.5V1.1V @ 250µA7nC @ 4.5V-6V850pF @ 10V
-
940mW (Ta)-55°C ~ 155°C (TJ)Surface MountU-WLB1515-99-UFBGA, WLBGA
Diodes Incorporated MOSFET P-CH 30V DFN2523-6 Preliminary
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated MOSFET P-CH 30V TSOT-26 PreliminaryP-ChannelMOSFET (Metal Oxide)30V4.3A (Ta)4.5V, 10V50 mOhm @ 6A, 10V2.1V @ 250µA11.8nC @ 10V±25V642pF @ 25V
-
1.38W-55°C ~ 150°C (TJ)
-
-
-
Diodes Incorporated MOSFET P-CH 30V TSOT-26 PreliminaryP-ChannelMOSFET (Metal Oxide)30V4.3A (Ta)4.5V, 10V50 mOhm @ 6A, 10V2.1V @ 250µA11.8nC @ 10V±25V642pF @ 25V
-
1.38W-55°C ~ 150°C (TJ)
-
-
-
Diodes Incorporated MOSFET P-CH 20V TSOT26 ObsoleteP-ChannelMOSFET (Metal Oxide)20V7.2A (Ta)1.8V, 4.5V35 mOhm @ 4A, 4.5V1.5V @ 250µA23.1nC @ 4.5V±12V2400pF @ 10V
-
2W (Ta)-55°C ~ 150°C (TJ)Surface MountTSOT-26SOT-23-6 Thin, TSOT-23-6
Infineon Technologies MOSFET N-CH TO263-3 Discontinued at -N-ChannelMOSFET (Metal Oxide)650V13A (Tc)10V190 mOhm @ 5.7A, 10V4V @ 290µA23nC @ 10V±20V1150pF @ 400V
-
72W (Tc)-55°C ~ 150°C (TJ)Surface MountD²PAK (TO-263AB)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Central Semiconductor Corp MOSFET P-CH 20V SOT-23F ObsoleteP-ChannelMOSFET (Metal Oxide)20V2.3A (Ta)2.5V, 5V88 mOhm @ 1.2A, 5V1.4V @ 250µA12nC @ 5V12V800pF @ 10V
-
350mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23FSOT-23-3 Flat Leads
Central Semiconductor Corp MOSFET N-CH 20V SOT-23F ObsoleteN-ChannelMOSFET (Metal Oxide)20V3.2A (Ta)2.5V, 4.5V50 mOhm @ 1.6A, 4.5V1.2V @ 250µA10nC @ 4.5V12V395pF @ 10V
-
350mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23FSOT-23-3 Flat Leads
Central Semiconductor Corp MOSFET P-CH 30V SOT-23F ObsoleteP-ChannelMOSFET (Metal Oxide)30V2.4A (Ta)2.5V, 4.5V91 mOhm @ 1.2A, 4.5V1.4V @ 250µA9.6nC @ 5V12V800pF @ 10V
-
350mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23FSOT-23-3 Flat Leads
Central Semiconductor Corp MOSFET N-CH 30V SOT-23F ObsoleteN-ChannelMOSFET (Metal Oxide)30V3.6A (Ta)2.5V, 4.5V40 mOhm @ 1.8A, 4.5V1.2V @ 250µA13nC @ 4.5V12V590pF @ 10V
-
350mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23FSOT-23-3 Flat Leads
Infineon Technologies MOSFET N-CH 100V 80A TO262-3 ObsoleteN-ChannelMOSFET (Metal Oxide)100V80A (Tc)6V, 10V7.2 mOhm @ 80A, 10V3.5V @ 90µA68nC @ 10V±20V4910pF @ 50V
-
150W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
ON Semiconductor MOSFET N-CH 90V 50A DPAK ActiveN-ChannelMOSFET (Metal Oxide)90V10A (Ta), 50A (Tc)4.5V, 10V16.7 mOhm @ 20A, 10V2.5V @ 250µA44nC @ 4.5V±20V4209pF @ 25V
-
4W (Ta), 100W (Tc)-55°C ~ 175°C (TJ)Surface MountDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
IXYS MOSFET N-CH 600V 1.4A D-PAK ObsoleteN-ChannelMOSFET (Metal Oxide)600V1.4A (Tc)10V9 Ohm @ 700mA, 10V5.5V @ 25µA5.2nC @ 10V±30V140pF @ 25V
-
50W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
IXYS MOSFET N-CH 600V ObsoleteN-ChannelMOSFET (Metal Oxide)600V1.4A (Tc)10V9 Ohm @ 700mA, 10V5.5V @ 25µA5.2nC @ 10V±30V140pF @ 25V
-
50W (Tc)-55°C ~ 150°C (TJ)Surface MountDieDie
IXYS MOSFET N-CH 600V Obsolete
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies MOSFET N-CH 8HSOF Last Time BuyN-ChannelMOSFET (Metal Oxide)40V300A (Tc)10V0.76 mOhm @ 100A, 10V4V @ 230µA287nC @ 10V±20V22945pF @ 25V
-
429W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-HSOF-8-18-PowerSFN
IXYS POWER MOSFET TO-3 Last Time BuyN-ChannelMOSFET (Metal Oxide)900V10A (Tc)10V1.1 Ohm @ 5A, 10V4.5V @ 4mA155nC @ 10V±20V4200pF @ 25V
-
300W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-204AATO-204AA, TO-3
IXYS POWER MOSFET TO-3 Last Time BuyN-ChannelMOSFET (Metal Oxide)800V11A (Tc)10V950 mOhm @ 5.5A, 10V4.5V @ 4mA155nC @ 10V±20V4200pF @ 25V
-
300W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-204AATO-204AA, TO-3
IXYS POWER MOSFET TO-3 Last Time BuyN-ChannelMOSFET (Metal Oxide)600V15A (Tc)10V500 mOhm @ 7.5A, 10V4.5V @ 4mA170nC @ 10V±20V4500pF @ 25V
-
300W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-204AETO-204AE
IXYS POWER MOSFET TO-3 Last Time Buy
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-