IXYS RF/Littelfuse Distributor - Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные - IXFT6N100F IXFH21N50F - CHIPSIC

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Технологии	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Vgs (Макс.)	Входная емкость (Ciss) (Макс.) @ Vds	Функция FET	Рассеиваемая мощность (макс.)	Рабочая Температура	Тип монтажа	Пакет устройств поставщика	Упаковка / чехол
IXFT6N100F	IXYS-RF	MOSFET N-CH 1000V 6A TO268	Active	N-Channel	MOSFET (Metal Oxide)	1000V	6A (Tc)	10V	1.9 Ohm @ 3A, 10V	5.5V @ 2.5mA	54nC @ 10V	±20V	1770pF @ 25V	-	180W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFH21N50F	IXYS-RF	MOSFET N-CH 500V 21A TO247	Active	N-Channel	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	250 mOhm @ 10.5A, 10V	5.5V @ 4mA	77nC @ 10V	±20V	2600pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFH12N50F	IXYS-RF	MOSFET N-CH 500V 12A TO247	Active	N-Channel	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	400 mOhm @ 6A, 10V	5.5V @ 2.5mA	54nC @ 10V	±20V	1870pF @ 25V	-	180W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFH6N100F	IXYS-RF	MOSFET N-CH 1000V 6A TO247	Active	N-Channel	MOSFET (Metal Oxide)	1000V	6A (Tc)	10V	1.9 Ohm @ 3A, 10V	5.5V @ 2.5mA	54nC @ 10V	±20V	1770pF @ 25V	-	180W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFT12N100F	IXYS-RF	MOSFET N-CH 1000V 12A TO268	Active	N-Channel	MOSFET (Metal Oxide)	1000V	12A (Tc)	10V	1.05 Ohm @ 6A, 10V	5.5V @ 4mA	77nC @ 10V	±20V	2700pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFX21N100F	IXYS-RF	MOSFET N-CH 1000V 21A PLUS247-3	Active	N-Channel	MOSFET (Metal Oxide)	1000V	21A (Tc)	10V	500 mOhm @ 10.5A, 10V	5.5V @ 4mA	160nC @ 10V	±20V	5500pF @ 25V	-	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXFK21N100F	IXYS-RF	MOSFET N-CH 1000V 21A TO264	Active	N-Channel	MOSFET (Metal Oxide)	1000V	21A (Tc)	10V	500 mOhm @ 10.5A, 10V	5.5V @ 4mA	160nC @ 10V	±20V	5500pF @ 25V	-	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IXFX55N50F	IXYS-RF	MOSFET N-CH 500V 55A PLUS247	Active	N-Channel	MOSFET (Metal Oxide)	500V	55A (Tc)	10V	85 mOhm @ 27.5A, 10V	5.5V @ 8mA	195nC @ 10V	±20V	6700pF @ 25V	-	560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXRFSM12N100	IXYS-RF	2A 1000V MOSFET IN SMPD PACKAGE	Active	N-Channel	MOSFET (Metal Oxide)	1000V	12A (Tc)	15V	1.05 Ohm @ 6A, 15V	5.5V @ 250µA	77nC @ 10V	±20V	2875pF @ 800V	-	940W	-55°C ~ 150°C (TJ)	Surface Mount	16-SMPD	16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
IXFX24N100F	IXYS-RF	MOSFET N-CH 1000V 24A PLUS247-3	Active	N-Channel	MOSFET (Metal Oxide)	1000V	24A (Tc)	10V	390 mOhm @ 12A, 10V	5.5V @ 8mA	195nC @ 10V	±20V	6600pF @ 25V	-	560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXFK55N50F	IXYS-RF	MOSFET N-CH 500V 55A TO264	Active	N-Channel	MOSFET (Metal Oxide)	500V	55A (Tc)	10V	85 mOhm @ 27.5A, 10V	5.5V @ 8mA	195nC @ 10V	±20V	6700pF @ 25V	-	560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IXFN24N100F	IXYS-RF	MOSFET N-CH 1000V 24A SOT227B	Active	N-Channel	MOSFET (Metal Oxide)	1000V	24A (Tc)	10V	390 mOhm @ 12A, 10V	5.5V @ 8mA	195nC @ 10V	±20V	6600pF @ 25V	-	600W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN55N50F	IXYS-RF	MOSFET N-CH 500V 55A SOT227B	Active	N-Channel	MOSFET (Metal Oxide)	500V	55A (Tc)	10V	85 mOhm @ 27.5A, 10V	5.5V @ 8mA	195nC @ 10V	±20V	6700pF @ 25V	-	600W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFK24N100F	IXYS-RF	MOSFET N-CH 1000V 24A TO264	Active	N-Channel	MOSFET (Metal Oxide)	1000V	24A (Tc)	10V	390 mOhm @ 12A, 10V	5.5V @ 8mA	195nC @ 10V	±20V	6600pF @ 25V	-	560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IXRFSM18N50	IXYS-RF	18A 500V MOSFET IN SMPD PACKAGE	Active	N-Channel	MOSFET (Metal Oxide)	500V	19A (Tc)	20V	340 mOhm @ 9.5A, 20V	6.5V @ 250µA	42nC @ 10V	±20V	2250pF @ 400V	-	835W	-55°C ~ 150°C (TJ)	Surface Mount	16-SMPD	16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
IXFH12N100F	IXYS-RF	MOSFET N-CH 1000V 12A TO-247AD	Active	N-Channel	MOSFET (Metal Oxide)	1000V	12A (Tc)	10V	1.05 Ohm @ 6A, 10V	5.5V @ 4mA	77nC @ 10V	±20V	2700pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-3P-3 Full Pack
IXFK44N50F	IXYS-RF	MOSFET N-CH 500V 44A TO264	Obsolete	N-Channel	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	120 mOhm @ 22A, 10V	5.5V @ 4mA	156nC @ 10V	±20V	5500pF @ 25V	-	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные