Número da peça Fabricante / Marca Descrição breve Status da ParteTipo de diodoTecnologiaVoltagem - Pico Reverse (Max)Corrente - Média Rectificada (Io)Voltagem - Encaminhar (Vf) (Máx.) @ SeCorrente - vazamento inverso @ VrTemperatura de operaçãoTipo de montagemPacote / CasoPacote de dispositivos de fornecedores
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 1A DBL ActiveSingle PhaseStandard800V1A1.1V @ 15A2µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-DIP (0.300", 7.62mm)DBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 1A DBL ActiveSingle PhaseStandard1kV1A1.1V @ 1.5A2µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-DIP (0.300", 7.62mm)DBL
Comchip Technology RECT BRIDGE GPP 600V 2A DF ActiveSingle PhaseStandard600V2A1.1V @ 2A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)4-DF
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 6A D3K ActiveSingle PhaseStandard1kV6A1.1V @ 6A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPD3K
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 4A GBU ActiveSingle PhaseStandard1kV4A1.1V @ 4A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 4A GBU ActiveSingle PhaseStandard1kV4A1.1V @ 4A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 4A GBU ActiveSingle PhaseStandard600V4A1.1V @ 4A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 4A TS4K ActiveSingle PhaseStandard600V4A1V @ 2A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLTS4K
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 6A GBU ActiveSingle PhaseStandard600V6A1.1V @ 6A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 6A GBU ActiveSingle PhaseStandard1kV6A1.1V @ 6A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 6A TS4K ActiveSingle PhaseStandard800V6A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLTS4K
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 6A TS4K ActiveSingle PhaseStandard600V6A1V @ 2A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLTS4K
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 6A GBU ActiveSingle PhaseStandard800V6A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 4A GBU ActiveSingle PhaseStandard800V4A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 6A GBU ActiveSingle PhaseStandard1kV6A1.1V @ 6A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 8A GBU ActiveSingle PhaseStandard1kV8A1.1V @ 8A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 6A GBU ActiveSingle PhaseStandard600V6A1.1V @ 6A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 8A GBU ActiveSingle PhaseStandard600V8A1.1V @ 8A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 8A GBU ActiveSingle PhaseStandard1kV8A1.1V @ 8A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 6A KBJL ActiveSingle PhaseStandard600V6A1.05V @ 3A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBJLKBJL
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 8A GBU ActiveSingle PhaseStandard600V8A1.1V @ 8A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 8A GBU ActiveSingle PhaseStandard600V8A1V @ 2A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 8A GBU ActiveSingle PhaseStandard800V8A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 6A GBJ ActiveSingle PhaseStandard600V6A1.1V @ 6A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 6A GBJ ActiveSingle PhaseStandard1kV6A1.1V @ 6A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
Diodes Incorporated BRIDGE RECT 1P 1000V 4A GBL 20PC ActiveSingle PhaseStandard1kV4A1V @ 2A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 10A KBJL ActiveSingle PhaseStandard800V10A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBJLKBJL
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 10A GBJ ActiveSingle PhaseStandard600V10A1.1V @ 10A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 10A GBJ ActiveSingle PhaseStandard1kV10A1.1V @ 10A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 15A GBJ ActiveSingle PhaseStandard1kV15A1.1V @ 7.5A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 15A GBJ ActiveSingle PhaseStandard600V15A1.1V @ 7.5A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 200V 4A TS4B ActiveSingle PhaseStandard200V4A980mV @ 4A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-4BTS4B
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 10A GBU ActiveSingle PhaseStandard800V10A1.1V @ 15A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1000V 25A GBU ActiveSingle PhaseStandard1kV25A1.2V @ 25A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 25A GBU ActiveSingle PhaseStandard600V25A1.2V @ 25A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 6A 1000V GBU ActiveSingle PhaseStandard1kV6A1V @ 6A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 20A GBJ ActiveSingle PhaseStandard1kV20A1.1V @ 20A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 20A GBJ ActiveSingle PhaseStandard600V20A1.1V @ 20A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 10A TS4K ActiveSingle PhaseStandard800V10A1V @ 2A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLTS4K
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 10A TS4K ActiveSingle PhaseStandard600V10A1V @ 2A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLTS4K
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 25A GBJ ActiveSingle PhaseStandard600V25A1.1V @ 12.5A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
Comchip Technology RECT BRIDGE GPP 50V 10A GBU ActiveSingle PhaseStandard50V10A1V @ 5A10µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Diodes Incorporated RECT BRIDGE GPP 4A 50V GBU ActiveSingle PhaseStandard50V4A1V @ 2A5µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Diodes Incorporated RECT BRIDGE GPP 6A 200V GBU ActiveSingle PhaseStandard200V6A1V @ 3A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Vishay Semiconductor Diodes Division RECTIFIER BRIDGE 1000V 1.9A D-37 ActiveSingle PhaseStandard1kV1.9A
-
-
-40°C ~ 150°C (TJ)Through Hole4-SIP, 2KBB2KBB
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 35A GBJ ActiveSingle PhaseStandard600V35A
-
5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPGBJ
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 25A TS-6P ActiveSingle PhaseStandard1kV25A1.1V @ 1.5A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
Taiwan Semiconductor Corporation BRIDGE RECT 1P 600V 25A TS-6P ActiveSingle PhaseStandard600V25A1.1V @ 15A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
Vishay Semiconductor Diodes Division DIODE GPP 8A 100V GPP INLINE GBU ActiveSingle PhaseStandard100V3.9A1V @ 8A5µA @ 100V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Vishay Semiconductor Diodes Division DIODE GPP 8A 400V GPP INLINE GBU ActiveSingle PhaseStandard400V3.9A1V @ 8A5µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU