Taiwan Semiconductor Distributor - Diodos - Rectificadores - Único - ES1DLW RVG SK320B R5G - CHIPSIC

Número da peça	Fabricante / Marca	Descrição breve	Status da Parte	Tipo de diodo	Voltagem - DC Reverse (Vr) (Máx.)	Corrente - Média Rectificada (Io)	Voltagem - Encaminhar (Vf) (Máx.) @ Se	Rapidez	Tempo de recuperação inversa (TRR)	Corrente - vazamento inverso @ Vr	Capacitance @ Vr, F	Tipo de montagem	Pacote / Caso	Pacote de dispositivos de fornecedores	Temperatura de operação - junção
ES1DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SK320B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AA	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS36LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SOD123W	Active	Schottky	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
UF1DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	1µA @ 200V	40pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
S5GB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AA	Active	Standard	400V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5KB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AA	Active	Standard	800V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK56B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AA	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
TSSW3U60 RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SOD123W	Active	Schottky	60V	3A	580mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
TSSW3U45 RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD123W	Active	Schottky	45V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS34 V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 40V DO-214AB	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
ES1ALHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S3GB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2J R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3BB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AA	Active	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2M R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 2A DO214AA	Active	Standard	1000V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1AL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
MUR320SB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR460SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Active	Standard	600V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S12KCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 12A DO214AB	Active	Standard	800V	12A	1.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 800V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR360SBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SS36HR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AB	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR320SBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR360SB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
S12MCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 12A DO214AB	Active	Standard	1000V	12A	1.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3J V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3KB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AA	Active	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3MB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AA	Active	Standard	1000V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3JB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS5A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	Active	Standard	50V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5A R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	Not For New Designs	Standard	50V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8MC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 8A DO214AB	Active	Standard	1000V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	Active	Standard	100V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8GC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A DO214AB	Active	Standard	400V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8KC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	Not For New Designs	Standard	800V	8A	985mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 800V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8JC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A DO214AB	Active	Standard	600V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8KC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	Active	Standard	800V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8JC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A DO214AB	Not For New Designs	Standard	600V	8A	985mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS310LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SOD123W	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 100V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS34LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SOD123W	Active	Schottky	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 125°C
HS3DB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS5F R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 5A DO214AB	Not For New Designs	Standard	300V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3JB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3FB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AA	Active	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5GBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AA	Active	Standard	400V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS5J V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	Active	Standard	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5J R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	Not For New Designs	Standard	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5D V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	Active	Standard	200V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HER308G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO201AD	Active	Standard	1000V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

Fabricantes para Diodos - Rectificadores - Único