Part Number Manufacturer / Brand Brife Description Part StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / Case
Infineon Technologies MOSFET N-CH 500V 7.1A TO251-3 Last Time BuyN-ChannelMOSFET (Metal Oxide)500V7.1A (Tc)10V520 mOhm @ 3.8A, 10V3.5V @ 250µA17nC @ 10V±20V680pF @ 100V
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66W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO251-3TO-251-3 Short Leads, IPak, TO-251AA
Infineon Technologies MOSFET N-CH Last Time Buy
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Infineon Technologies MOSFET N-CH Last Time Buy
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Infineon Technologies MOSFET N-CH Last Time Buy
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Infineon Technologies MOSFET N-CH Last Time Buy
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Infineon Technologies MOSFET N-CH 600V 4.5A TO252-3 ObsoleteN-ChannelMOSFET (Metal Oxide)600V4.5A (Tc)10V950 mOhm @ 2.8A, 10V3.9V @ 200µA25nC @ 10V±20V490pF @ 25V
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50W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TO252-3TO-252-3, DPak (2 Leads + Tab), SC-63
Infineon Technologies MOSFET N-CH 600V 7.3A TO252-3 ObsoleteN-ChannelMOSFET (Metal Oxide)600V7.3A (Tc)10V600 mOhm @ 4.6A, 10V3.9V @ 350µA27nC @ 10V±20V790pF @ 25V
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83W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TO252-3TO-252-3, DPak (2 Leads + Tab), SC-63
Infineon Technologies MOSFET N-CH 900V 6.9A TO262-3 ObsoleteN-ChannelMOSFET (Metal Oxide)900V6.9A (Tc)10V800 mOhm @ 4.1A, 10V3.5V @ 460µA42nC @ 10V±20V1100pF @ 100V
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104W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 900V 11A TO220-3 ObsoleteN-ChannelMOSFET (Metal Oxide)900V11A (Tc)10V500 mOhm @ 6.6A, 10V3.5V @ 740µA68nC @ 10V±20V1700pF @ 100V
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156W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 800V 8A TO262-3 ObsoleteN-ChannelMOSFET (Metal Oxide)800V8A (Tc)10V650 mOhm @ 5.1A, 10V3.9V @ 470µA60nC @ 10V±20V1100pF @ 100V
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104W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 600V 3.2A TO251-3 ObsoleteN-ChannelMOSFET (Metal Oxide)600V3.2A (Tc)10V1.4 Ohm @ 2A, 10V3.9V @ 135µA17nC @ 10V±20V400pF @ 25V
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38W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO251-3TO-251-3 Stub Leads, IPak
Infineon Technologies MOSFET P-CH 30V 50A TO-252 ObsoleteP-ChannelMOSFET (Metal Oxide)30V50A (Tc)4.5V, 10V7 mOhm @ 50A, 10V2V @ 250µA126nC @ 10V±20V6880pF @ 25V
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150W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO252-5TO-252-5, DPak (4 Leads + Tab), TO-252AD
Infineon Technologies MOSFET N-CH 100V 100A TO262-3 ObsoleteN-ChannelMOSFET (Metal Oxide)100V137A (Tc)6V, 10V4.5 mOhm @ 100A, 10V3.5V @ 150µA117nC @ 10V±20V8410pF @ 50V
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214W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 75V 120A TO220 ObsoleteN-ChannelMOSFET (Metal Oxide)75V120A (Tc)10V2.3 mOhm @ 100A, 10V3.8V @ 273µA206nC @ 10V±20V14400pF @ 37.5V
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300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 800V 4A TO-220AB ObsoleteN-ChannelMOSFET (Metal Oxide)800V4A (Tc)10V1.3 Ohm @ 2.5A, 10V3.9V @ 240µA31nC @ 10V±20V570pF @ 100V
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63W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 800V 6A TO-220AB ObsoleteN-ChannelMOSFET (Metal Oxide)800V6A (Tc)10V900 mOhm @ 3.8A, 10V3.9V @ 250µA41nC @ 10V±20V785pF @ 100V
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83W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 800V 8A TO-220AB ObsoleteN-ChannelMOSFET (Metal Oxide)800V8A (Tc)10V650 mOhm @ 5.1A, 10V3.9V @ 470µA60nC @ 10V±20V1100pF @ 100V
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104W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 55V 80A TO-220 ObsoleteN-ChannelMOSFET (Metal Oxide)55V80A (Tc)10V8 mOhm @ 80A, 10V4V @ 240µA187nC @ 10V±20V3660pF @ 25V
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300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 650V TO-247-3 ObsoleteN-ChannelMOSFET (Metal Oxide)650V46A (Tc)10V45 mOhm @ 24.9A, 10V4V @ 1.25mA93nC @ 10V±20V4.34nF @ 400V
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227W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247TO-247-3
Infineon Technologies MOSFET N-CH TO263-3 Discontinued at -N-ChannelMOSFET (Metal Oxide)650V13A (Tc)10V190 mOhm @ 5.7A, 10V4V @ 290µA23nC @ 10V±20V1150pF @ 400V
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72W (Tc)-55°C ~ 150°C (TJ)Surface MountD²PAK (TO-263AB)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 100V 80A TO262-3 ObsoleteN-ChannelMOSFET (Metal Oxide)100V80A (Tc)6V, 10V7.2 mOhm @ 80A, 10V3.5V @ 90µA68nC @ 10V±20V4910pF @ 50V
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150W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 8HSOF Last Time BuyN-ChannelMOSFET (Metal Oxide)40V300A (Tc)10V0.76 mOhm @ 100A, 10V4V @ 230µA287nC @ 10V±20V22945pF @ 25V
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429W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-HSOF-8-18-PowerSFN
Infineon Technologies MOSFET N-CH BARE DIE Active
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Infineon Technologies MOSFET N-CH BARE DIE Active
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Infineon Technologies MOSFET N-CH BARE DIE Active
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