GigaDevice Distributor - Memory - GD9FS1G8F2AMGI GD25Q256DBIGY - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Memory Type	Memory Format	Technology	Memory Size	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Memory Interface	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
GD9FS1G8F2AMGI	GigaDevice Semiconductor (HK) Limited	SLC NAND FLASH	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
GD25Q256DBIGY	GigaDevice Semiconductor (HK) Limited	NOR FLASH	Active	Non-Volatile	FLASH	FLASH - NOR	256Mb (32M x 8)	104MHz	50µs, 2.4ms	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
GD5F2GQ4RF9IGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WLGA Exposed Pad	8-LGA (6x8)
GD5F2GQ4UEYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F2GQ4UFYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F2GQ4UEYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD25S512MDBIGY	GigaDevice Semiconductor (HK) Limited	NOR FLASH	Active	Non-Volatile	FLASH	FLASH - NOR	512Mb (64M x 8)	104MHz	50µs, 2.4ms	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
GD5F4GQ4RBYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RCYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UBYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UCYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RBYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RCYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UBYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UCYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)

Manufacturers for Memory