Part Number Manufacturer / Brand Brife Description Part StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Diodes Incorporated MOSFET 2P-CH 50V 0.16A SOT563 Obsolete2 P-Channel (Dual)Logic Level Gate50V160mA6 Ohm @ 100mA, 4V1V @ 250µA
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29pF @ 25V400mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
Diodes Incorporated MOSFET 2N-CH 20V 7A 8-SOIC Obsolete2 N-Channel (Dual)Logic Level Gate20V7A26 mOhm @ 6A, 4.5V1.2V @ 250µA
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562pF @ 10V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
Diodes Incorporated MOSFET 2P-CH 20V 3A 9UWLB Obsolete2 P-Channel (Dual) Common SourceLogic Level Gate20V3A100 mOhm @ 1A, 4.5V900mV @ 250µA4.2nC @ 4.5V310pF @ 10V800mW-55°C ~ 150°C (TJ)Surface Mount9-UFBGA, WLBGAU-WLB1515-9
Diodes Incorporated MOSFET 2N-CH 60V 0.18A SOT363 Obsolete2 N-Channel (Dual)Logic Level Gate60V180mA6 Ohm @ 115mA, 10V2.5V @ 250µA0.87nC @ 10V22pF @ 25V300mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
Diodes Incorporated MOSFET N/P-CH 60V V-DFN3030-8 ObsoleteN and P-ChannelLogic Level Gate60V3.1A, 2.4A85 mOhm @ 1.5A, 10V3V @ 250µA11.5nC @ 10V731pF @ 20V1.4W-55°C ~ 150°C (TJ)Surface Mount8-WDFNV-DFN3030-8
Diodes Incorporated MOSFET 2P-CH 30V 5.7A 8SO Obsolete2 P-Channel (Dual)Logic Level Gate30V5.7A25 mOhm @ 7.1A, 10V3V @ 250µA31.6nC @ 10V1678pF @ 15V1.81W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
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