VB30100C |
VISHAY |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A |
VB30100C-E3 |
VISHAY |
VB30100C-E3 original vishay components |
VB30100C-E3/4W |
Vishay Semiconductor Diodes Division |
DIODE ARRAY SCHOTTKY 100V TO263 |
VB30100C-E3/8W |
Vishay Semiconductor Diodes Division |
DIODE ARRAY SCHOTTKY 100V TO263 |
VB30100C-M3/4W |
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 100V TO-263AB |
VB30100C-M3/8W |
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 100V TO-263AB |
VB30100S |
VISHAY |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A |
VB30100S-E3 |
VISHAY |
VB30100S-E3 original vishay components |
VB30100S-E3/4W |
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A TO263AB |
VB30100S-E3/8W |
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A TO263AB |
VB30100S-M3/4W |
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 100V TO-263AB |
VB30100S-M3/8W |
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 100V TO-263AB |