| Nand Flash_128M*8BitK9F1G08UOB-PCBO |
SAMSUNG |
SAMSUNG orginal components |
| NAND0128W3ADAN7 |
STMicroelectronics |
NAND0128W3ADAN7 STM IC QFP |
| NAND016GW3C4BN6 |
STMicroelectronics |
NAND016GW3C4BN6 STM IC TSOP |
| NAND016W3B2AN6 |
STMicroelectronics |
NAND016W3B2AN6 STM IC TSOP |
| NAND016W3B2AZA6 |
STMicroelectronics |
NAND016W3B2AZA6 STM IC BGA |
| NAND016W3B2BN6 |
STMicroelectronics |
NAND016W3B2BN6 STM IC TSSOP |
| NAND016W3B2CN6 |
STMicroelectronics |
NAND016W3B2CN6 STM IC ORIGINAL |
| NAND01DW382AN6E |
STMicroelectronics |
NAND01DW382AN6E STM IC TSOP |
| NAND01G-B |
STMicroelectronics |
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory IC |
| NAND01G-B2B |
STMicroelectronics |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory IC |
| NAND01G-M |
STMicroelectronics |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP IC |
| NAND01G-N |
STMicroelectronics |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package IC |
NAND02GW4B2CN1 STMicroelectronics 살수 장치