다이오드 - 정류기 - 단일 - 이산 소자 반도체 제품 - STTH3002G-TR STTH30R04G-TR STPS30M60SG-TR STPS5045SG-TR - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
STTH3002G-TR	STMicroelectronics	DIODE GEN PURP 200V 30A D2PAK	Active	Standard	200V	30A	1.05V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 200V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
STTH30R04G-TR	STMicroelectronics	DIODE GEN PURP 400V 30A D2PAK	Active	Standard	400V	30A	1.45V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 400V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
STPS30M60SG-TR	STMicroelectronics	DIODE SCHOTTKY 60V 30A D2PAK	Active	Schottky	60V	30A	590mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	165µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK	150°C (Max)
STPS5045SG-TR	STMicroelectronics	DIODE SCHOTTKY 45V 50A D2PAK	Active	Schottky	45V	50A	610mV @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	-	360µA @ 45V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK	200°C (Max)
MBR40250TG	ON Semiconductor	DIODE SCHOTTKY 250V 40A TO220AB	Active	Schottky	250V	40A	970mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	30µA @ 250V	500pF @ 5V, 1MHz	Through Hole	TO-220-3	TO-220AB	-65°C ~ 150°C
DSEI12-12A	IXYS	DIODE GEN PURP 1.2KV 11A TO220AC	Active	Standard	1200V	11A	2.6V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	250µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
VS-50WQ06FNHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5.5A TO252AA	Active	Schottky	60V	5.5A	570mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 60V	360pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
MBRB4030T4G	ON Semiconductor	DIODE SCHOTTKY 30V 40A D2PAK	Active	Schottky	30V	40A	550mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	-	350µA @ 30V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
MBR40250G	ON Semiconductor	DIODE SCHOTTKY 250V 40A TO220-2	Active	Schottky	250V	40A	970mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	30µA @ 250V	500pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220-2	-65°C ~ 150°C
GB01SLT06-214	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 1A DO214AA	Active	Silicon Carbide Schottky	650V	1A (DC)	2V @ 1A	No Recovery Time > 500mA (Io)	0ns	10µA @ 6.5V	76pF @ 1V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 175°C
MBRB40250TG	ON Semiconductor	DIODE SCHOTTKY 250V 40A D2PAK	Active	Schottky	250V	40A	970mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	250µA @ 250V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
C4D02120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 2A TO220-2	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	167pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
1N4148UR-1	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO213AA	Active	Standard	75V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	-	Surface Mount	DO-213AA (Glass)	DO-213AA	-65°C ~ 175°C
SM74611KTTR	Texas Instruments	DIODE GEN PURP 30V 15A DDPAK	Active	Standard	30V	15A	26mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	300nA @ 28V	-	Surface Mount	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA	DDPAK/TO-263-3	-40°C ~ 125°C
MBRF40250TG	ON Semiconductor	DIODE SCHOTTKY 250V 40A TO220FP	Active	Schottky	250V	40A	970mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	30µA @ 250V	500pF @ 5V, 1MHz	Through Hole	TO-220-3 Full Pack	TO-220FP	-65°C ~ 150°C
LQA08TC600	Power Integrations	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	3.05V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	25µA @ 600V	33pF @ 10V, 1MHz	Through Hole	TO-220-2	TO-220AC	150°C (Max)
1N647-1	Microsemi Corporation	DIODE GEN PURP 400V 400MA DO35	Active	Standard	400V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 400V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
VS-8EWF12S-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 8A TO252	Active	Standard	1200V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	100µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-40°C ~ 150°C
SCS206AMC	Rohm Semiconductor	DIODE SCHOTTKY 650V 6A TO220FM	Active	Silicon Carbide Schottky	650V	6A	1.55V @ 6A	No Recovery Time > 500mA (Io)	0ns	120µA @ 600V	219pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
DSEI30-06A	IXYS	DIODE GEN PURP 600V 37A TO247AD	Active	Standard	600V	37A	1.6V @ 37A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
APT40DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 40A TO247	Active	Standard	1000V	40A	3V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
VS-HFA25PB60PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 25A TO247AC	Active	Standard	600V	25A	1.7V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	20µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
VS-40EPS12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 40A TO247AC	Active	Standard	1200V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
SCS208AMC	Rohm Semiconductor	DIODE SCHOTTKY 650V 8A TO220FM	Active	Silicon Carbide Schottky	650V	8A	1.55V @ 8A	No Recovery Time > 500mA (Io)	0ns	160µA @ 600V	291pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
FFH30S60STU	ON Semiconductor	DIODE GEN PURP 600V 30A TO247	Active	Standard	600V	30A	2.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 150°C
C3D10060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO263-2	Active	Silicon Carbide Schottky	600V	29A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	480pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-2	-55°C ~ 175°C
DSEP30-12A	IXYS	DIODE GEN PURP 1.2KV 30A TO247AD	Active	Standard	1200V	30A	2.74V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	250µA @ 1200V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
STTH60L06W	STMicroelectronics	DIODE GEN PURP 600V 60A DO247	Active	Standard	600V	60A	1.55V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	105ns	50µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
C4D05120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 5A TO252-2	Active	Silicon Carbide Schottky	1200V	19A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	150µA @ 1200V	390pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
STTH6004W	STMicroelectronics	DIODE GEN PURP 400V 60A DO247	Active	Standard	400V	60A	1.2V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	50µA @ 400V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
SCS205KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 5A TO220AC	Active	Silicon Carbide Schottky	1200V	5A (DC)	1.6V @ 5A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	270pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
APT60S20BG	Microsemi Corporation	DIODE SCHOTTKY 200V 75A TO247	Active	Schottky	200V	75A	900mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	1mA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 150°C
DSEI60-12A	IXYS	DIODE GEN PURP 1.2KV 52A TO247AD	Active	Standard	1200V	52A	2.55V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	2.2mA @ 1200V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
VS-60EPS12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 60A TO247AC	Active	Standard	1200V	60A	1.09V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
SCS212AGC	Rohm Semiconductor	DIODE SCHOTTKY 650V 12A TO220AC	Active	Silicon Carbide Schottky	650V	12A (DC)	1.55V @ 12A	No Recovery Time > 500mA (Io)	0ns	240µA @ 600V	438pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
RURG80100	ON Semiconductor	DIODE GEN PURP 1KV 80A TO247	Active	Standard	1000V	80A	1.9V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
VS-60EPF12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 60A TO247AC	Active	Standard	1200V	60A	1.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
SCS215AGC	Rohm Semiconductor	DIODE SCHOTTKY 650V 15A TO220AC	Active	Silicon Carbide Schottky	650V	15A	1.55V @ 15A	No Recovery Time > 500mA (Io)	0ns	300µA @ 600V	550pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220ACFP	175°C (Max)
APT100S20BG	Microsemi Corporation	DIODE SCHOTTKY 200V 120A TO247	Active	Schottky	200V	120A	950mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	2mA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 150°C
C4D08120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8A TO252-2	Active	Silicon Carbide Schottky	1200V	24.5A (DC)	3V @ 2A	No Recovery Time > 500mA (Io)	0ns	250µA @ 1200V	560pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
C4D08120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8A TO220-2	Active	Silicon Carbide Schottky	1200V	24.5A (DC)	1.8V @ 7.5A	No Recovery Time > 500mA (Io)	0ns	250µA @ 1200V	560pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
DH40-18A	IXYS	DIODE GEN PURP 1.8KV 40A TO247AD	Active	Standard	1800V	40A	2.7V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	100µA @ 1800V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
IDH10G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 10A TO220-2	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	62µA @ 1200V	525pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
SCS220AMC	Rohm Semiconductor	DIODE SCHOTTKY 650V 20A TO220FM	Active	Silicon Carbide Schottky	650V	20A	1.55V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 600V	730pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
1N5809	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 1A D5A	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
VS-HFA16PB120PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A TO247AC	Active	Standard	1200V	16A	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
FJH1101	ON Semiconductor	DIODE GEN PURP 15V 150MA DO35	Active	Standard	15V	150mA (DC)	1.1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	15pA @ 15V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
GP2D005A170B	Global Power Technologies Group	DIODE SCHOTTKY 1700V 5A TO247-2	Active	Silicon Carbide Schottky	1700V	5A (DC)	1.75V @ 5A	No Recovery Time > 500mA (Io)	0ns	10µA @ 1700V	406pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
1N5811US	Microsemi Corporation	DIODE GEN PURP 150V 3A B-MELF	Active	Standard	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C

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