Taiwan Semiconductor Distributor - 다이오드 - 정류기 - 단일 - SS19 R3G SS1H15LW RVG - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
SS19 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO214AC	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS1H15LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123W	Active	Schottky	150V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500nA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS14LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123W	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
ES1JL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
S10JC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A DO214AB	Not For New Designs	Standard	600V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS110L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	Active	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S2A R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	Active	Standard	50V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5D V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	Active	Standard	200V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10GC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB	Not For New Designs	Standard	400V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	Active	Standard	50V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	Active	Standard	100V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10MC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 10A DO214AB	Active	Standard	1000V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10KC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 10A DO214AB	Active	Standard	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10MC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 10A DO214AB	Not For New Designs	Standard	1000V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5G V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	Active	Standard	400V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5M V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 5A DO214AB	Active	Standard	1000V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR160S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 600V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
S5M R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 5A DO214AB	Not For New Designs	Standard	1000V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
BYG20G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	Active	Standard	400V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1JL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS215L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A SUB SMA	Active	Schottky	150V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SOD123W	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
S3ABHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AA	Active	Standard	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2M R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 2A DO214AA	Active	Standard	1000V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS3KB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AA	Active	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2AA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AC	Active	Standard	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S10GCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB	Active	Standard	400V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK320A R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AC	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S10JCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A DO214AB	Active	Standard	600V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3J R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Not For New Designs	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS1H10LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SOD123HE	Active	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
UF1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	Active	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	1µA @ 400V	25pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SSB44 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 4A DO214AA	Active	Schottky	40V	4A	500mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	235pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
UG2JA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AC	Active	Standard	600V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	2µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS215LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A SOD123W	Active	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
ESH1GM RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MICRO SMA	Active	Standard	400V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 400V	3pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
MUR420S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Not For New Designs	Standard	200V	4A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR440S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	Not For New Designs	Standard	400V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR440S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	Active	Standard	400V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S12KC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 12A DO214AB	Not For New Designs	Standard	800V	12A	1.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 800V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12GC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 12A DO214AB	Not For New Designs	Standard	400V	12A	1.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 400V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR420S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Active	Standard	200V	4A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ES3JBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.45V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	34pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR460S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Active	Standard	600V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S12JC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A DO214AB	Not For New Designs	Standard	600V	12A	1.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 600V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3JB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.45V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	34pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3FB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AA	Active	Standard	300V	3A	1.13V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS310 R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

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