Manufacturer Part NumberGA10SICP12-263
Manufacturer / BrandGeneSiC Semiconductor
Available Quantity72980 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR SJT 1200V 25A TO263-7
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download GA10SICP12-263.pdf

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Part Number
GA10SICP12-263
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
100 mOhm @ 10A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1403pF @ 800V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (7-Lead)
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Weight
Contact us
Application
Email for details
Replacement Part
GA10SICP12-263

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