Manufacturer Part NumberEPC2111ENGRT
Manufacturer / BrandEPC
Available Quantity53640 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR GAN ASYMMETRICAL HALF BRID
Product CategoryTransistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download EPC2111ENGRT.pdf

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Part Number
EPC2111ENGRT
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
16A (Ta)
Rds On (Max) @ Id, Vgs
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id
2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
230pF @ 15V, 590pF @ 15V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Weight
Contact us
Application
Email for details
Replacement Part
EPC2111ENGRT

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