W9412G6KH-5I Winbond Electronics Distributor
Manufacturer Part Number | W9412G6KH-5I |
---|---|
Manufacturer / Brand | Winbond Electronics |
Available Quantity | 91960 Pieces |
Unit Price | Quote by Email ([email protected]) |
Brife Description | IC DRAM 128M PARALLEL 66TSOP II |
Product Category | Memory |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | W9412G6KH-5I.pdf |
Please fill the below inquiry form, we will reply you the quotation for W9412G6KH-5I within 24 hours.
- Part Number
- W9412G6KH-5I
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- Memory Type
- Volatile
- Memory Format
- DRAM
- Technology
- SDRAM - DDR
- Memory Size
- 128Mb (8M x 16)
- Clock Frequency
- 200MHz
- Write Cycle Time - Word, Page
- 15ns
- Access Time
- 50ns
- Memory Interface
- Parallel
- Voltage - Supply
- 2.3 V ~ 2.7 V
- Operating Temperature
- -40°C ~ 85°C (TA)
- Mounting Type
- Surface Mount
- Package / Case
- 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package
- 66-TSOP II
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- W9412G6KH-5I
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Part Number | Manufacturer | Description |
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W9412G6IH-5 | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |
W9412G6JH-4 | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |
W9412G6JH-5I | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |
W9412G6KH-4 | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |
W9412G6KH-4 TR | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |
W9412G6KH-5 | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |
W9412G6KH-5 TR | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |
W9412G6KH-5I | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |
W9412G6KH-5I TR | Winbond Electronics | IC DRAM 128M PARALLEL 66TSOP II |