FCP190N60-GF102 ON Semiconductor Distributor
| Manufacturer Part Number | FCP190N60-GF102 |
|---|---|
| Manufacturer / Brand | ON Semiconductor |
| Available Quantity | 158220 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | MOSFET N-CH 600V TO-220-3 |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | FCP190N60-GF102.pdf |
Please fill the below inquiry form, we will reply you the quotation for FCP190N60-GF102 within 24 hours.
- Part Number
- FCP190N60-GF102
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 199 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 74nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 2950pF @ 25V
- FET Feature
-
- Power Dissipation (Max)
- 208W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220
- Package / Case
- TO-220-3
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- FCP190N60-GF102
Related Components made by ON Semiconductor
Related Keywords For "FCP19"
| Part Number | Manufacturer | Description |
|---|---|---|
| FCP190N60 | ON Semiconductor | MOSFET N-CH 600V TO220-3 |
| FCP190N60-GF102 | ON Semiconductor | MOSFET N-CH 600V TO-220-3 |
| FCP190N60E | ON Semiconductor | MOSFET N-CH 600V TO220-3 |
| FCP190N65F | ON Semiconductor | MOSFET N-CH 650V 20.6A TO220-3 |
| FCP190N65S3 | ON Semiconductor | MOSFET N-CH 650V 17A TO220-3 |
| FCP190N65S3R0 | ON Semiconductor | MOSFET N-CH 650V 190MOHM TO220 I |
| FCP1913H104G | Cornell Dubilier Electronics (CDE) | Capacitor FILM 0.1UF 2% 50VDC 1913 |
| FCP1913H104G-E2 | Cornell Dubilier Electronics (CDE) | Capacitor FILM 0.1UF 2% 50VDC 1913 |
| FCP1913H104G-E3 | Cornell Dubilier Electronics (CDE) | Capacitor FILM 0.1UF 2% 50VDC 1913 |
| FCP1913H104J-E2 | Cornell Dubilier Electronics (CDE) | Capacitor FILM 0.1UF 5% 50VDC 1913 |
| FCP1913H104J-E3 | Cornell Dubilier Electronics (CDE) | Capacitor FILM 0.1UF 5% 50VDC 1913 |
| FCP1913H473G | Cornell Dubilier Electronics (CDE) | Capacitor FILM 0.047UF 2% 50VDC 1913 |