Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusTransistor-TypFrequenzGewinnenSpannung - TestAktuelle BewertungRauschzahlAktueller TestLeistungSpannung - BewertetPaket / FallLieferantengerätepaket
CEL FET RF 30V 900MHZ 79A ObsoleteLDMOS900MHz22.5dB7.5V600mA
-
40mA33dBm30V4-SMD, Flat Leads79A
CEL FET RF 4V 12GHZ M04 4SMD ObsoleteN-Channel GaAs HJ-FET12GHz13dB2V60mA0.65dB10mA125mW4VSOT-343FM04
CEL FET RF 30V 900MHZ 79A-PKG ObsoleteLDMOS900MHz22dB7.5V3A
-
200mA38.6dBm30V4-SMD, Flat Leads79A
CEL FET RF 30V 900MHZ 79A ObsoleteLDMOS900MHz22dB7.5V2.1A
-
140mA38.5dBm30V4-SMD, Flat Leads79A
CEL FET RF 30V 900MHZ 79A ObsoleteLDMOS900MHz22.5dB7.5V600mA
-
40mA33dBm30V4-SMD, Flat Leads79A
CEL IC HJ-FET RF N-CH S02 4-MICROX ObsoleteN-Channel GaAs HJ-FET12GHz14dB2V60mA0.35dB10mA165mW4V4-SMD, Flat LeadsS02
CEL FET RF 30V 900MHZ 3MINIMOLD ObsoleteN-Channel900MHz23.5dB7.5V600mA
-
40mA32.2dB30VTO-243AA3-PowerMiniMold
Broadcom Limited FET RF 5V 2GHZ SOT-343 ObsoletepHEMT FET2GHz16.5dB3V100mA0.5dB30mA19dBm5VSC-82A, SOT-343SOT-343
Ampleon USA Inc. RF FET LDMOS 65V 18DB SOT1121B ObsoleteLDMOS (Dual), Common Source2.5GHz ~ 2.7GHz18dB28V
-
-
860mA25W65VSOT-1121BLDMOST
Ampleon USA Inc. RF FET LDMOS 65V 18DB SOT1121B ObsoleteLDMOS (Dual), Common Source2.5GHz ~ 2.7GHz18dB28V
-
-
860mA25W65VSOT-1121BLDMOST
Toshiba Semiconductor and Storage MOSF RF N CH 30V 1A PW-MINI Discontinued at -N-Channel520MHz14.9dB9.6V1A
-
50mA630mW30VTO-243AASC-62
Toshiba Semiconductor and Storage JFET N-CH SOT23 ActiveN-Channel JFET1kHz
-
10V
-
1dB500µA
-
-
TO-236-3, SC-59, SOT-23-3SC-59
Toshiba Semiconductor and Storage FET RF N-CH 10V 470 MHZ PW-MINI Discontinued at -N-Channel470MHz8dB4.5V500mA
-
50mA28dbm10VTO-243AAPW-MINI
Toshiba Semiconductor and Storage MOSF RF N CH 20V 3A PW-X Discontinued at -N-Channel520MHz11.4dB7.2V3A
-
500mA7W20VTO-271AAPW-X
Toshiba Semiconductor and Storage FET RF 12.5V 800MHZ USQ ActiveN-Channel Dual Gate800MHz22dB6V30mA2.5dB10mA
-
12.5VSC-82A, SOT-343USQ
Toshiba Semiconductor and Storage MOSFET N-CH PW-MINI Discontinued at -N-Channel470MHz13.3dB6V2A
-
500mA4.3W16VTO-243AAPW-MINI
Microsemi Corporation RF POWER MOSFET 500V 10A Obsolete2 N-Channel (Dual) Common Source130MHz14dB135V10A
-
150mA300W500V
-
-
Microsemi Corporation POWER MOSFET RF N-CH 900V TO-247AD Obsolete
-
-
-
-
-
-
-
-
-
-
-
Microsemi Corporation MOSFET RF N-CH 100V 150W T11 ObsoleteN-Channel30MHz22dB100V12A
-
250mA150W270VT11T11
Microsemi Corporation RF POWER MOSFET 500V 10A M174 ObsoleteN-Channel81MHz15dB125V10A
-
50mA150W500VM174M174
Microsemi Corporation POWER MOSFET RF N-CH 150V TO-247AD ObsoleteN-Channel13.56MHz21dB50V11A
-
200mA125W150VTO-247-3TO-247AD
Microsemi Corporation POWER MOSFET RF N-CH 150V TO-247AD ObsoleteN-Channel13.56MHz21dB50V11A
-
200mA125W150V
-
-
Microsemi Corporation POWER MOSFET RF N-CH 300V TO-247AD Obsolete
-
-
-
-
-
-
-
-
-
TO-247-3TO-247AD
Microsemi Corporation POWER MOSFET RF N-CH 300V TO-247AD Obsolete
-
-
-
-
-
-
-
-
-
TO-247-3TO-247AD
Microsemi Corporation POWER MOSFET RF N-CH 900V TO-247AD Obsolete
-
-
-
-
-
-
-
-
-
-
-
Microsemi Corporation RF POWER MOSFET 450V TO-247 ObsoleteN-Channel81.36MHz13dB150V9A
-
-
90W450VTO-247-3TO-247
Microsemi Corporation MOSFET RF N-CH 100V 150W T11 Obsolete
-
-
-
-
-
-
-
-
-
-
-
CEL IC HJ-FET N-CH GAAS 4SMINI ObsoleteN-Channel20GHz10.5dB2V15mA0.85dB6mA
-
3V4-SMD, Flat Leads
-
CEL IC HJ-FET N-CH GAAS 4SMINI ObsoleteN-Channel GaAs HJ-FET20GHz11dB2V70mA0.85dB6mA
-
4V4-SMD, Flat Leads
-
M/A-Com Technology Solutions TRANSISTOR GAN 10WCW 0.03-3.5GHZ ObsoleteHEMT30MHz ~ 3.5GHz17.5dB50V
-
-
490mA40dBm65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 10WCW 0.03-3.5GHZ ObsoleteHEMT30MHz ~ 3.5GHz17.5dB50V
-
-
490mA40dBm65V
-
-
M/A-Com Technology Solutions FET RF 65V 3.5GHZ 14DFN ObsoleteHEMT3.5GHz14dB50V1mA
-
35mA14W65V14-VDFN Exposed Pad14-DFN (3x6)
M/A-Com Technology Solutions TRANSISTOR GAN 30WCW 0.03-3.5GHZ ObsoleteHEMT1MHz13.6dB50V2.5mA
-
100mA30W50V
-
-
M/A-Com Technology Solutions FET RF 65V 1MHZ 14DFN ObsoleteHEMT1MHz14dB50V3mA
-
100mA12W65V14-VDFN Exposed Pad14-DFN (3x6)
M/A-Com Technology Solutions FET RF 65V 3.5GHZ 14DFN ObsoleteHEMT3.5GHz13dB50V6mA
-
200mA14W65V14-VDFN Exposed Pad14-DFN (3x6)
M/A-Com Technology Solutions FET RF 65V 4GHZ SOT-89 ObsoleteHEMT4GHz15.6dB50V300mA
-
17mA5W65VTO-243AASOT-89
M/A-Com Technology Solutions TRANSISTOR GAN 125W 960-1215MHZ ObsoleteHEMT960MHz ~ 1.215GHz18.9dB50V4A
-
100mA125W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 250W 960-1215MHZ ObsoleteHEMT
-
18.6dB50V8.6A
-
250mA250W65V
-
-
M/A-Com Technology Solutions FETS RF GAN 500W 960-1215MHZ ObsoleteHEMT960MHz ~ 1.215GHz20.5dB50V15.7A
-
400mA500W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 600W ObsoleteHEMT1.03GHz ~ 1.09GHz21.3dB50V82A
-
600mA600W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 125W 1.2-1.4GHZ ObsoleteHEMT1.2GHz ~ 1.4GHz18.4dB50V4.8A
-
100mA125W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 250W 1.2-1.4GHZ ObsoleteHEMT1.2GHz ~ 1.4GHz17.6dB50V9A
-
250mA250W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 500W 1.2-1.4GHZ ObsoleteHEMT1.2GHz ~ 1.4GHz19.22dB50V18.1A
-
400mA500W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 500W 1.2-1.4GHZ ObsoleteHEMT1.2GHz ~ 1.4GHz19.22dB50V18.1A
-
400mA500W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 100W 1.2-2.0GHZ ObsoleteHEMT1.2GHz ~ 2GHz14.8dB50V4.5A
-
500mA100W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 30WPK 2.7-3.1GHZ ObsoleteHEMT2.7GHz ~ 3.1GHz11.2dB50V1.5A
-
250mA30W65V
-
-
M/A-Com Technology Solutions TRANSISTOR GAN 100W 2.7-3.1GHZ ObsoleteHEMT2.7GHz ~ 3.1GHz12dB50V4.2A
-
500mA100W65V
-
-
M/A-Com Technology Solutions FETS RF GAN HEMT 180W 2.7-3.1GHZ ObsoleteHEMT2.7GHz ~ 3.1GHz11.2dB50V500mA
-
500mA180W65V
-
-
M/A-Com Technology Solutions FET RF 65V 3.5GHZ ObsoleteHEMT3.1GHz ~ 3.5GHz11.2dB50V9mA
-
300mA120W65V
-
-
Ampleon USA Inc. RF FET LDMOS 65V 31.5DB SOT12121 ObsoleteLDMOS2.11GHz ~ 2.17GHz31.5dB28V
-
-
75mA1.6W65VSOT-1212-216-HSOP