Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusTransistor-TypAktuell - Sammler (Ic) (Max)Spannung - Kollektor-Emitter-Durchbruch (max.)Vce Sättigung (Max) @ Ib, IcAktuell - Kollektor Cutoff (Max)Gleichstromverstärkung (hFE) (Min) @ Ic, VceLeistung maxFrequenz - ÜbergangBetriebstemperaturBefestigungsartPaket / FallLieferantengerätepaket
Toshiba Semiconductor and Storage TRANSISTOR NPN 1A 600V SC71 ObsoleteNPN1A600V1V @ 75mA, 600mA100µA (ICBO)40 @ 200mA, 5V1W
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150°C (TJ)Through HoleSC-71MSTM
Toshiba Semiconductor and Storage TRANSISTOR NPN 1A 600V SC71 ObsoleteNPN1A600V1V @ 75mA, 600mA100µA (ICBO)100 @ 100mA, 5V1W
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150°C (TJ)Through HoleSC-71MSTM
Toshiba Semiconductor and Storage TRANSISTOR NPN 1A 800V SC71 ObsoleteNPN1A800V1V @ 100mA, 800mA100µA (ICBO)60 @ 100mA, 5V1W
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150°C (TJ)Through HoleSC-71MSTM
Toshiba Semiconductor and Storage TRANSISTOR NPN 1A 800V SC71 ObsoleteNPN1A800V1V @ 100mA, 800mA100µA (ICBO)60 @ 100mA, 5V1W
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150°C (TJ)Through HoleSC-71MSTM
Toshiba Semiconductor and Storage TRANSISTOR NPN 1A 375V SC71 ObsoleteNPN1A375V1V @ 100mA, 800mA100µA (ICBO)100 @ 100mA, 5V1W
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150°C (TJ)Through HoleSC-71MSTM
Toshiba Semiconductor and Storage TRANSISTOR NPN 1A 375V SC71 ObsoleteNPN1A375V1V @ 100mA, 800mA100µA (ICBO)100 @ 100mA, 5V1W
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150°C (TJ)Through HoleSC-71MSTM
Toshiba Semiconductor and Storage TRANSISTOR NPN 1.5A 160V SC71 ObsoleteNPN1.5A160V500mV @ 50mA, 500mA100nA (ICBO)140 @ 100mA, 5V1W100MHz150°C (TJ)Through HoleSC-71MSTM
Toshiba Semiconductor and Storage TRANSISTOR NPN 3A 100V TO220-3 ObsoleteNPN3A100V2V @ 12mA, 3A100µA (ICBO)2000 @ 1.5A, 3V2W
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150°C (TJ)Through HoleTO-220-3 Full PackTO-220NIS
Toshiba Semiconductor and Storage TRANSISTOR NPN 3A 100V TO220-3 ObsoleteNPN3A100V2V @ 12mA, 3A100µA (ICBO)2000 @ 1.5A, 3V2W
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150°C (TJ)Through HoleTO-220-3 Full PackTO-220NIS
Toshiba Semiconductor and Storage TRANSISTOR NPN 2A 100V TO226-3 ObsoleteNPN2A100V1.5V @ 1mA, 1A10µA (ICBO)2000 @ 1A, 2V900mW100MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 Long BodyTO-92MOD