Hersteller für Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung
| Artikelnummer | Hersteller / Marke | Kurze Beschreibung | Teilstatus | Transistor-Typ | Aktuell - Sammler (Ic) (Max) | Spannung - Kollektor-Emitter-Durchbruch (max.) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | Vce Sättigung (Max) @ Ib, Ic | Aktuell - Kollektor Cutoff (Max) | Frequenz - Übergang | Leistung max | Befestigungsart | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Toshiba Semiconductor and Storage | TRANSISTOR PREBIAS NPN 50V 500NA VESM | Active | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | 22 kOhms | 70 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | 150mW | Surface Mount | SOT-723 | VESM | ||
| Toshiba Semiconductor and Storage | TRANSISTOR PREBIAS PNP 50V 500NA VESM | Active | PNP - Pre-Biased | 100mA | 50V | 47 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-723 | VESM | |
| Toshiba Semiconductor and Storage | X34 PB-F VESM TRANSISTOR PD 150M | Active | PNP - Pre-Biased | 100mA | 50V | 22 kOhms | 22 kOhms | 70 @ 10mA, 5V | 300mV @ 500µA, 5mA | 100nA (ICBO) | 150mW | Surface Mount | SOT-723 | VESM | ||
| Toshiba Semiconductor and Storage | X34 PB-F VESM TRANSISTOR PD 150M | Active | PNP - Pre-Biased | 100mA | 50V | 2.2 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 500µA, 5mA | 100nA (ICBO) | 150mW | Surface Mount | SOT-723 | VESM |