NXP Semiconductors Distributor - Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung - PDTC144EK,115 PDTC144ES,126 - CHIPSIC

Artikelnummer	Hersteller / Marke	Kurze Beschreibung	Teilstatus	Transistor-Typ	Aktuell - Sammler (Ic) (Max)	Spannung - Kollektor-Emitter-Durchbruch (max.)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	Gleichstromverstärkung (hFE) (Min) @ Ic, Vce	Vce Sättigung (Max) @ Ib, Ic	Aktuell - Kollektor Cutoff (Max)	Frequenz - Übergang	Leistung max	Befestigungsart	Paket / Fall	Lieferantengerätepaket
PDTC144EK,115	NXP USA Inc.	TRANSISTOR PREBIAS NPN 250MW SMT3	Obsolete	NPN - Pre-Biased	100mA	50V	47 kOhms	47 kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK
PDTC144ES,126	NXP USA Inc.	TRANSISTOR PREBIAS NPN 500MW TO92-3	Obsolete	NPN - Pre-Biased	100mA	50V	47 kOhms	47 kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PDTC144TK,115	NXP USA Inc.	TRANSISTOR PREBIAS NPN 250MW SMT3	Obsolete	NPN - Pre-Biased	100mA	50V	47 kOhms	-	100 @ 1mA, 5V	150mV @ 500µA, 10mA	1µA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK
PDTC144WK,115	NXP USA Inc.	TRANSISTOR PREBIAS NPN 250MW SMT3	Obsolete	NPN - Pre-Biased	100mA	50V	47 kOhms	22 kOhms	60 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK
PDTC323TK,115	NXP USA Inc.	TRANSISTOR PREBIAS NPN 250MW SMT3	Obsolete	NPN - Pre-Biased	500mA	15V	2.2 kOhms	-	100 @ 50mA, 5V	80mV @ 2.5mA, 50mA	500nA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK
PDTD113ES,126	NXP USA Inc.	TRANSISTOR PREBIAS NPN 500MW TO92-3	Obsolete	NPN - Pre-Biased	500mA	50V	1 kOhms	1 kOhms	33 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PDTD113ZS,126	NXP USA Inc.	TRANSISTOR PREBIAS NPN 500MW TO92-3	Obsolete	NPN - Pre-Biased	500mA	50V	1 kOhms	10 kOhms	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PDTD123ES,126	NXP USA Inc.	TRANSISTOR PREBIAS NPN 500MW TO92-3	Obsolete	NPN - Pre-Biased	500mA	50V	2.2 kOhms	2.2 kOhms	40 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PDTD123TK,115	NXP USA Inc.	TRANSISTOR PREBIAS NPN 250MW SMT3	Obsolete	NPN - Pre-Biased	500mA	50V	2.2 kOhms	-	100 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK
PDTD123TS,126	NXP USA Inc.	TRANSISTOR PREBIAS NPN 500MW TO92-3	Obsolete	NPN - Pre-Biased	500mA	50V	2.2 kOhms	-	100 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PDTD123YS,126	NXP USA Inc.	TRANSISTOR PREBIAS NPN 500MW TO92-3	Obsolete	NPN - Pre-Biased	500mA	50V	2.2 kOhms	10 kOhms	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PDTC144WS,126	NXP USA Inc.	TRANSISTOR PREBIAS NPN 500MW TO92-3	Obsolete	NPN - Pre-Biased	100mA	50V	47 kOhms	22 kOhms	60 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PDTD113EK,115	NXP USA Inc.	TRANSISTOR PREBIAS NPN 250MW SMT3	Obsolete	NPN - Pre-Biased	500mA	50V	1 kOhms	1 kOhms	33 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK

Hersteller für Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung